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quality Power MOSFET MIRACLE POWER MJF15N80 800V 15A Avalanche Tested for in LED Lighting and TV Applications factory
quality Power MOSFET MIRACLE POWER MJF15N80 800V 15A Avalanche Tested for in LED Lighting and TV Applications factory

Power MOSFET MIRACLE POWER MJF15N80 800V 15A Avalanche Tested for in LED Lighting and TV Applications

Key Attributes
Model Number: MJF15N80
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
290mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.78pF
Input Capacitance(Ciss):
1.728nF
Pd - Power Dissipation:
34.7W
Output Capacitance(Coss):
46pF
Gate Charge(Qg):
38.8nC@10V
Mfr. Part #:
MJF15N80
Package:
TO-220F
Product Description

Product Overview

The MJF15N80 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It is rated for 800V and 15A with a typical on-resistance of 0.25 at VGS = 10V. This device is 100% avalanche tested and is suitable for applications such as single-ended flyback or two-transistor forward topologies, including PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Advanced Super Junction Technology
  • Testing: 100% Avalanche Tested

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
- Voltage - - 800 - V
- Current - - 15 - A
- RDS(ON) VGS = 10V - 0.25 -
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C - - 800 V
VGS Gate-Source Voltage - - 30 - V
ID Drain Current-Continuous, TC = 25C - - - 15 A
IDM Drain Current-Pulsed - - - 45 A
PD Maximum Power Dissipation @ TJ = 25C - - - 34.7 W
dv/dt Peak Diode Recovery dv/dt - - - 15 V/ns
EAS Single Pulsed Avalanche Energy - - - 320 mJ
TJ, TSTG Operating and Store Temperature Range - -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - - 3.6 - C/W
RJA Thermal Resistance, Junction to Ambient - - 62 - C/W
Electrical Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 805 - - V
IDSS Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.5 - 4.2 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 7.5A - 0.25 0.29
Rg Gate Resistance f = 1.0MHz - 25 -
Ciss Input Capacitance VDS = 100V, VGS = 0V, f = 100kHz - 1728 - pF
Coss Output Capacitance - - 46 - pF
Crss Reverse Transfer Capacitance - - 0.78 - pF
td(on) Turn-On Delay Time VDD = 400V, VGS= 10V, ID = 17A, RG = 5 - 29 - ns
tr Turn-On Rise Time - - 42 - ns
td(off) Turn-Off Delay Time - - 137 - ns
tf Turn-Off Fall Time - - 36 - ns
Qg Total Gate Charge VDD = 600V, VGS = 0 to 10V ID = 17A - 38.8 - nC
Qgs Gate-Source Charge - - 8.6 - -
Qgd Gate-Drain Charge - - 13.4 - -
VSD Drain-Source Diode Forward Voltage VGS = 0V, IF = 1A - 0.7 - V
Trr Body Diode Reverse Recovery Time VR = 400V, IF = 17A dIF/dt = 100A/s - 427 - ns
Qrr Body Diode Reverse Recovery Charge VR = 400V, IF = 17A dIF/dt = 100A/s - 6.8 - C
Irrm Peak reverse recovery current VR = 400V, IF = 17A dIF/dt = 100A/s - 29 - A

Package Information: TO-220F


2504151445_MIRACLE-POWER-MJF15N80_C47361099.pdf

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