Durable N Channel and P Channel Enhancement Mode MOSFET MIRACLE POWER MD3001X for Electronic Systems
Key Attributes
Model Number:
MD3001X
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
22A
RDS(on):
-
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
126pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
183pF
Input Capacitance(Ciss):
1.22nF
Pd - Power Dissipation:
24W
Gate Charge(Qg):
11nC@10V;25nC@10V
Mfr. Part #:
MD3001X
Package:
PDFN-8(3x3)
Product Description
Product Overview
The MD3001X is an N-Channel and P-Channel enhancement mode MOSFET from Miracle Technology Co., Ltd., featuring advanced Miracle Technology. This device is designed for reliable and rugged performance, with 100% EAS guaranteed. It is ideal for motor drive applications, offering distinct specifications for both N-MOS and P-MOS configurations, including low on-resistance (RDS(ON)) at various gate-source voltages and high continuous drain current capabilities.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Miracle Technology
- Channel Type: N-Channel and P-Channel Enhancement Mode
- Reliability: 100% EAS Guaranteed
Technical Specifications
| Model | Parameter | N-MOS Max. | P-MOS Max. | Unit |
|---|---|---|---|---|
| MD3001X | N-Channel Features | 30V, 20A | ||
| RDS(ON)=11m(Typ.)@VGS=10V | ||||
| RDS(ON)=16m(Typ.)@VGS=4.5V | ||||
| P-Channel Features | -30V, -20A | |||
| RDS(ON)=15m(Typ.)@VGS=-10V | ||||
| RDS(ON)=19m(Typ.)@VGS=-4.5V | ||||
| Absolute Maximum Ratings (TA = 25C unless otherwise noted) | Drain-Source Voltage (VDS) | 30 | -30 | V |
| Gate-Source Voltage (VGS) | 20 | 20 | V | |
| Drain Current-Continuous, TC =25C (ID) | 20 | -22 | A | |
| Drain Current-Continuous, TC =100C (ID) | 13 | -14 | A | |
| Drain Current-Continuous, TA =25C (ID) | 9 | -8 | A | |
| Drain Current-Continuous, TA =70C (ID) | 7 | -6 | A | |
| Drain Current-Pulsed (IDM) | 80 | -88 | A | |
| Avalanche Energy, Single pulse (EAS) | 16 | 20 | mJ | |
| Avalanche Current (IAS) | 8 | -9 | A | |
| Total Power Dissipation @ TC =25C (PD) | 16 | 24 | W | |
| Total Power Dissipation @ TC =100C (PD) | 6.5 | 9.5 | W | |
| Total Power Dissipation @ TA =25C (PD) | 2.8 | 2.8 | W | |
| Total Power Dissipation @ TA =70C (PD) | 1.8 | 1.8 | W | |
| Junction and Storage Temperature Range (TJ, TSTG) | -55 to 150 C | |||
| Thermal Characteristics | Thermal Resistance Junction-Case (RJC) | 7.8 | 5.2 | C/W |
| Thermal Resistance Junction-Ambient (RJA) | 45 | C/W | ||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | Drain-Source Breakdown Voltage (BVDSS) | 30 (N) | -30 (P) | V |
| Zero Gate Voltage Drain Current (IDSS) | 1 A (N) | -1 A (P) | A | |
| Forward Gate Body Leakage Current (IGSS) | 100 nA (N) | 100 nA (P) | nA | |
| Gate Threshold Voltage (VGS(th)) | 1.0 - 2.5 V (N) | -1.0 - -2.5 V (P) | V | |
| Static Drain-Source On-Resistance (RDS(on)) | 11 - 20 m (N, VGS=10V) | 15 - 25 m (P, VGS=-10V) | m | |
| 16 - 25 m (N, VGS=4.5V) | 19 - 30 m (P, VGS=-4.5V) | m | ||
| Forward Transconductance (gfs) | NA (N) | NA (P) | S | |
| Gate Resistance (Rg) | NA (N) | NA (P) | ||
| Input Capacitance (Ciss) | 480 pF (N) | 1220 pF (P) | pF | |
| Output Capacitance (Coss) | 72 pF (N) | 183 pF (P) | pF | |
| Reverse Transfer Capacitance (Crss) | 47 pF (N) | 126 pF (P) | pF | |
| Turn-On Delay Time (td(on)) | 8 ns (N) | 14 ns (P) | ns | |
| Turn-On Rise Time (tr) | 12 ns (N) | 26 ns (P) | ns | |
| Turn-Off Delay Time (td(off)) | 20 ns (N) | 34 ns (P) | ns | |
| Turn-Off Fall Time (tf) | 10 ns (N) | 16 ns (P) | ns | |
| Total Gate Charge (Qg) | 11 nC (N) | 25 nC (P) | nC | |
| Gate-Source Charge (Qgs) | 3.2 nC (N) | 5.2 nC (P) | nC | |
| Gate-Drain Charge (Qgd) | 4.1 nC (N) | 7.2 nC (P) | nC | |
| Drain-Source Diode Characteristics | Continuous Source Current (IS) | 20 A (N) | -22 A (P) | A |
| Pulse Source Current (ISM) | 80 A (N) | -88 A (P) | A | |
| Drain-Source Diode Forward Voltage (VSD) | 0.75 - 1.3 V (N, ISD=1A) | -0.75 - -1.3 V (P, ISD=-1A) | V | |
| Reverse Recovery Time (trr) | 10 ns (N) | 17 ns (P) | ns | |
| Reverse Recovery Charge (Qrr) | 13 nC (N) | 28 nC (P) | nC | |
2411220026_MIRACLE-POWER-MD3001X_C34373745.pdf
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