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quality Power Management Using MIRACLE POWER MU0004D P Channel Enhancement Mode MOSFET with Lead Free Option factory
quality Power Management Using MIRACLE POWER MU0004D P Channel Enhancement Mode MOSFET with Lead Free Option factory

Power Management Using MIRACLE POWER MU0004D P Channel Enhancement Mode MOSFET with Lead Free Option

Key Attributes
Model Number: MU0004D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+175℃
RDS(on):
367mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Output Capacitance(Coss):
34pF
Input Capacitance(Ciss):
1.198nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
19.6nC@10V
Mfr. Part #:
MU0004D
Package:
TO-252
Product Description

Product Overview

The MU0004D is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This device offers a breakdown voltage of -100V and a continuous drain current of -7A, with a typical on-resistance (RDS(on)) of 304m at VGS = -10V. It features low gate charge and is 100% UIS and DVDS tested. The MU0004D is suitable for applications such as load switching, PWM applications, and power management. It is also available in a lead-free product option.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: P-Channel Enhancement Mode MOSFET
  • Lead Free: Yes (acquired)

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted - - -100 V
VGS Gate-Source Voltage - - 20 V
ID Drain Current-Continuous TC = 25C - - -7.0 A
ID Drain Current-Continuous TC = 100C - - -4.9 A
IDM Drain Current-Pulsed - - -28 A
PD Maximum Power Dissipation TC = 25C - - 40 W
EAS Single Pulsed Avalanche Energy - - 28 mJ
TJ, TSTG Operating and Store Temperature Range -55 - 175 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - 3.7 - C/W
RJA Thermal Resistance, Junction to Ambient - - - C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250A -100 - - V
IDSS Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V - - -1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250A -1.0 - -2.5 V
RDS(on) Static Drain-Source On- Resistance VGS = -10V, ID = -3A - 304 367 m
RDS(on) Static Drain-Source On- Resistance VGS = -4.5V, ID = -3A - 328 402 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 5.2 -
Ciss Input Capacitance VDS = -50V, VGS = 0V, f = 1.0MHz - 1198 - pF
Coss Output Capacitance - 34 - pF
Crss Reverse Transfer Capacitance - 28 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDS = -50V, VGS = -10V, RL = 16, RGEN = 3.0 - 13.6 - ns
tr Turn-On Rise Time - 3.9 - ns
td(off) Turn-Off Delay Time - 41.8 - ns
tf Turn-Off Fall Time - 6.2 - ns
Qg Total Gate Charge VDS = -50V, VGS = -10V, ID = -3A - 19.6 - nC
Qgs Gate-Source Charge - 6.0 - nC
Qgd Gate-Drain Charge - 4.2 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - -7.0 A
ISM Maximum Pulsed Current - - -28 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = -3A - - -1.2 V
Trr Body Diode Reverse Recovery Time IF = -3A, dIF/dt = -100A/s - 43 - ns
Qrr Body Diode Reverse Recovery Charge IF = -3A, dIF/dt = -100A/s - 84 - nC

2504151445_MIRACLE-POWER-MU0004D_C47361199.pdf

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