MIRACLE POWER MJC30N65 N Channel MOSFET 650V 30A Featuring Power Management and Avalanche Testing

Key Attributes
Model Number: MJC30N65
Product Custom Attributes
Configuration:
Half-Bridge
Drain To Source Voltage:
655V
Current - Continuous Drain(Id):
30A
RDS(on):
95mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
6.75pF
Input Capacitance(Ciss):
2.497nF
Pd - Power Dissipation:
260W
Output Capacitance(Coss):
239pF
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
MJC30N65
Package:
TO-220
Product Description

Product Overview

The MJC30N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for efficient power management. It offers a 650V breakdown voltage, 30A continuous drain current, and a low on-resistance of 95m (typ.) at VGS = 10V. Designed for easy gate switching control and 100% avalanche tested, this MOSFET is ideal for applications such as server and telecom power supplies, EV charging, solar inverters, UPS systems, and various power converter topologies including Boost PFC, Half Bridge, Asymmetric Half Bridge, Series Resonance Half Bridge, and Full Bridge.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: N-Channel Power MOSFET
  • Technology: Advanced Super Junction Technology

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
General Parameters
MJC30N65 N-Channel Power MOSFET
650V, 30A, RDS(on)(Typ.) = 95m@VGS = 10V
Easy To Control Gate Switching
100% Avalanche Tested
Absolute Maximum Ratings (TC = 25C unless otherwise noted)
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage -30 30 V
ID Drain Current-Continuous, TC = 25C 30 A
IDM Drain Current-Pulsed 90 A
PD Maximum Power Dissipation, TC = 25C 260 W
dv/dt Peak Diode Recovery dv/dt c 15 V/ns
EAS Single Pulsed Avalanche Energy d 1051 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.48 C/W
RJA Thermal Resistance, Junction to Ambient 62 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 655 - - V
IDSS Zero Gate Voltage Drain Current VDS = 650, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.8 - 4.2 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 15A - 95 110 m
Dynamic Characteristics
RG Gate Resistance f = 1.0MHz - 13.4 -
Ciss Input Capacitance VDS = 50V, VGS = 0V, f = 10kHz - 2497 - pF
Coss Output Capacitance - 239 - pF
Crss Reverse Transfer Capacitance - 6.75 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 400V, VGS = 10V, ID = 25A, RG = 2 - 23 - ns
tr Turn-On Rise Time - 28 - ns
td(off) Turn-Off Delay Time - 108.4 - ns
tf Turn-Off Fall Time - 24 - ns
Qg Total Gate Charge VDD = 400V, VGS = 0 to 10V, ID = 25A - 52 - nC
Qgs Gate-Source Charge - 7.1 - nC
Qgd Gate-Drain Charge - 20 - nC
Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage VGS = 0V, IF = 1A - 0.69 - V
Trr Body Diode Reverse Recovery Time VR = 400V, IF = 25A, dIF/dt = 100A/s - 380.8 - ns
Qrr Body Diode Reverse Recovery Charge VR = 400V, IF = 25A, dIF/dt = 100A/s - 8.8 - C
Irrm Peak reverse recovery current VR = 400V, IF = 25A, dIF/dt = 100A/s - 45.2 - A

2505071457_MIRACLE-POWER-MJC30N65_C48391677.pdf

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