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quality power switching solution featuring MIRACLE POWER MJQ47N65F N Channel Power MOSFET with 650V 47A rating factory
quality power switching solution featuring MIRACLE POWER MJQ47N65F N Channel Power MOSFET with 650V 47A rating factory

power switching solution featuring MIRACLE POWER MJQ47N65F N Channel Power MOSFET with 650V 47A rating

Key Attributes
Model Number: MJQ47N65F
Product Custom Attributes
Drain To Source Voltage:
655V
Configuration:
-
Current - Continuous Drain(Id):
47A
RDS(on):
95mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
4.6pF
Number:
1 N-channel
Output Capacitance(Coss):
482pF
Input Capacitance(Ciss):
4.799nF
Pd - Power Dissipation:
391W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
MJQ47N65F
Package:
TO-247
Product Description

Product Overview

The MJQ47N65F is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for efficient and controllable gate switching. This enhancement mode MOSFET offers a 650V drain-source voltage, a continuous drain current of 47A, and a low on-resistance of 82m (typ.) at VGS = 10V. It is designed for demanding applications such as EV charging, UPS systems, solar inverters, server power supplies, and telecom power, as well as various power factor correction and bridge topologies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: N-Channel Power MOSFET
  • Technology: Advanced Super Junction Technology
  • Mode: Enhancement Mode

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
General Features
- Voltage, Current, RDS(ON) VGS = 10V - 650V, 47A, 82m - -
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 3 - 5 V
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C - - 650 V
VGS Gate-Source Voltage - - 30 - V
ID Drain Current-Continuous TC =25C - - 47 A
IDM Drain Current-Pulsed b - - 141 A
PD Maximum Power Dissipation @ TJ =25C - - 391 W
dv/dt Peak Diode Recovery dv/dt c - - 50 V/ns
EAS Single Pulsed Avalanche Energy d - - 1960 mJ
TJ, TSTG Operating and Store Temperature Range - -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - - 0.32 - C/W
RJA Thermal Resistance, Junction to Ambient - - 62 - C/W
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 655 - - V
IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V - - 5 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 14A - 82 95 m
Dynamic Characteristics
RG Gate Resistance f = 1.0MHz - 13 -
Ciss Input Capacitance VDS = 50V, VGS = 0V, f = 10kHz - 4799 - pF
Coss Output Capacitance - - 482 - pF
Crss Reverse Transfer Capacitance - - 4.6 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 400V, VGS = 13V, ID = 25.8A, RG = 1.7 - 38.8 - ns
tr Turn-On Rise Time - - 26.8 - ns
td(off) Turn-Off Delay Time - - 134.8 - ns
tf Turn-Off Fall Time - - 20 - ns
Qgs Gate-Source Charge VDD = 400V, VGS = 0 to 10V, ID = 25.8A - 20 - nC
Qgd Gate-Drain Charge - - 30 - nC
Qg Total Gate Charge - - 85 - nC
Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage VGS = 0V, IF = 1A - 0.66 - V
Trr Body Diode Reverse Recovery Time VR = 400V, IF = 9.6A, dIF/dt = 100A/s - 124.8 - ns
Qrr Body Diode Reverse Recovery Charge VR = 400V, IF = 9.6A, dIF/dt = 100A/s - 0.754 - C
Irrm Peak reverse recovery current VR = 400V, IF = 9.6A, dIF/dt = 100A/s - 11.5 - A

2408011701_MIRACLE-POWER-MJQ47N65F_C34373732.pdf

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