Power Switch Circuit N Channel MOSFET 700V 4A Low Gate Charge Miracle Power MPF04N70 for Conversion
Key Attributes
Model Number:
MPF04N70
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
4A
RDS(on):
3Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.7pF
Number:
1 N-channel
Output Capacitance(Coss):
48pF
Input Capacitance(Ciss):
606pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
12.7nC@10V
Mfr. Part #:
MPF04N70
Package:
TO-220F
Product Description
Product Overview
The MPF04N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for power switch circuits in adaptors and chargers. It features a 700V drain-source voltage, a continuous drain current of 4A, and a low on-resistance of 2.7 (typ.) at 10V VGS. This MOSFET offers low gate charge, fast switching speeds, and is 100% tested for single pulse avalanche energy, making it suitable for efficient power conversion applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MPF Series
- Channel Type: N-Channel
- Technology: Power MOSFET
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | VGS = 10V | 700V, 4A, 2.7 | ||||
| Low Gate Charge | ||||||
| Fast Switching | ||||||
| 100% Single Pulse Avalanche Energy Test | ||||||
| Low Reverse Transfer Capacitances | ||||||
| Application | ||||||
| Power switch circuit of adaptor and charger | ||||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 700 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 4 | A | |||
| ID | Drain Current-Continuous, TC =100C | 2.5 | A | |||
| IDM | Drain Current-Pulsed | 28 | A | |||
| PD | Maximum Power Dissipation @ TJ =25C | 30 | W | |||
| EAS | Single Pulsed Avalanche Energy | L=10mH, VDD=50V,Ias=6.3A,RG=25 Starting TJ=25 | 198 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | 4.17 | C/W | |||
| RJA | Thermal Resistance Junction-Ambient | 62.5 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 700 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 700V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | - | 4 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID =2A | - | 2.70 | 3.0 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 606 | - | pF |
| Coss | Output Capacitance | - | 48 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 2.7 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 350V, ID =2A, RG = 10 | - | 14 | - | ns |
| tr | Turn-On Rise Time | - | 15 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 30 | - | ns | |
| tf | Turn-Off Fall Time | - | 9 | - | ns | |
| Qg | Total Gate Charge | VDS = 560V, ID =4A, VGS = 10V | - | 12.7 | - | nC |
| Qgs | Gate-Source Charge | - | 3.0 | - | nC | |
| Qgd | Gate-Drain Charge | - | 5.1 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 4 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 16 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 4A | - | - | 1.5 | V |
| trr | Reverse Recovery Time | IS=4A,Tj = 25 dIF/dt=100A/us, VGS=0V | - | 325 | - | ns |
| Qrr | Reverse Recovery Charge | - | 1.47 | - | uC | |
2408011701_MIRACLE-POWER-MPF04N70_C34373720.pdf
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