86--136 6733 2386
quality 12A Continuous Drain Current N Channel MOSFET MIRACLE POWER MPF12N65A Ideal for Adaptor Applications factory
quality 12A Continuous Drain Current N Channel MOSFET MIRACLE POWER MPF12N65A Ideal for Adaptor Applications factory

12A Continuous Drain Current N Channel MOSFET MIRACLE POWER MPF12N65A Ideal for Adaptor Applications

Key Attributes
Model Number: MPF12N65A
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-
RDS(on):
750mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.078nF
Pd - Power Dissipation:
43W
Output Capacitance(Coss):
170pF
Gate Charge(Qg):
47nC@10V
Mfr. Part #:
MPF12N65A
Package:
TO-220F
Product Description

Product Overview

The MPF12N65A is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed with Miracle Technology for high performance. It features a 650V breakdown voltage, a continuous drain current of 12A at 25C, and a low on-resistance of 0.64 (typ.) at VGS = 10V. This MOSFET offers low Crss and fast switching characteristics, making it suitable for applications such as adaptors, standby power supplies, switching power supplies, and LED power solutions. It is 100% avalanche tested for enhanced reliability.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Miracle Technology
  • Channel Type: N-Channel
  • Product Line: Power MOSFET

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
General Features
Breakdown Voltage 650 V
Continuous Drain Current (TC =25C) 12 A
RDS(ON) (Typ.) VGS = 10V 0.64 0.75
Low Crss
Fast Switching
100% Avalanche Tested
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C 650 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous (TC =25C) 12 A
ID Drain Current-Continuous (TC =100C) 7 A
IDM Drain Current-Pulsed b 48 A
PD Maximum Power Dissipation (@ TJ =25C) 43 W
EAS Single Pulsed Avalanche Energy c 605 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 2.85 C/W
RJA Thermal Resistance, Junction to Ambient 54 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 650 - - V
IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 2 4 - V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 6A - 0.64 0.75
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 2078 - pF
Coss Output Capacitance - 170 - pF
Crss Reverse Transfer Capacitance - 21 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 325V, ID =12A, VGS=10V, RGEN=24 - 31 - ns
tr Turn-On Rise Time - 43 - ns
td(off) Turn-Off Delay Time - 133 - ns
tf Turn-Off Fall Time - 53 - ns
Gate Charge Characteristics
Qg Total Gate Charge VDS = 520V, ID =12A, VGS = 10V - 47 - nC
Qgs Gate-Source Charge - 11 - nC
Qgd Gate-Drain Charge - 18 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 12 A
ISM Maximum Pulsed Current VGS = 0V - - 48 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 12A - - 1.4 V
Trr Body Diode Reverse Recovery Time IS=12A,VGS = 0V dIF/dt=100A/us - 432 - ns
Qrr Body Diode Reverse Recovery Charge - 5.1 - uC

Notes:
a. TJ=+25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. L = 10mH, VDD=50V,IAS = 11A,RG=25 Starting TJ=25 .


2410122015_MIRACLE-POWER-MPF12N65A_C17701990.pdf

Related Products
quality High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant factory
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
quality NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component factory
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
quality Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits factory
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
quality N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities factory
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.