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quality Nexperia MJD44H11J transistor with DPAK package offering performance in power switching applications factory
quality Nexperia MJD44H11J transistor with DPAK package offering performance in power switching applications factory

Nexperia MJD44H11J transistor with DPAK package offering performance in power switching applications

Key Attributes
Model Number: MJD44H11J
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50uA
Pd - Power Dissipation:
20W
Transition Frequency(fT):
160MHz
Type:
NPN
Current - Collector(Ic):
8A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MJD44H11J
Package:
DPAK
Product Description

Product Overview

The MJD44H11 is an NPN high power bipolar transistor designed for surface-mounted applications. It features a high thermal power dissipation capability and high energy efficiency due to reduced heat generation. This transistor offers a low collector-emitter saturation voltage and fast switching speeds, making it electrically similar to the popular MJD44H series. It is suitable for various power management applications, including load switching, linear mode voltage regulation, constant current drive for backlighting, motor drives, and relay replacement.

Product Attributes

  • Brand: Nexperia
  • Package Type: DPAK (SOT428C)
  • Complementary PNP Transistor: MJD45H11

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage - - - 80 V
IC Collector current - - - 8 A
ICM Peak collector current single pulse; tp 1 ms - - 16 A
hFE DC current gain VCE = 1 V; IC = 2 A; Tamb = 25 C 60 - - -
VCEO Collector-emitter voltage - - - 80 V
VEBO Emitter-base voltage open collector - - 6 V
IC Collector current - - - 8 A
ICM Peak collector current single pulse; tp 1 ms - - 16 A
Ptot Total power dissipation Tmb 25 C [1] - - 20 W
Ptot Total power dissipation Tamb 25 C [2] - - 1.75 W
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -55 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-mb) Thermal resistance from junction to mounting base - - - 6.25 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - - 72 K/W
ICES Collector-emitter cut-off current VCE = 64 V; VBE = 0 V; Tamb = 25 C - - 1 A
ICES Collector-emitter cut-off current VCE = 64 V; VBE = 0 V; Tj = 150 C - - 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 1 A
hFE DC current gain VCE = 1 V; IC = 2 A; Tamb = 25 C 60 - - -
hFE DC current gain VCE = 1 V; IC = 4 A; Tamb = 25 C 40 - - -
VCEsat Collector-emitter saturation voltage IC = 8 A; IB = 400 mA; Tamb = 25 C - - 1 V
VBEsat Base-emitter saturation voltage IC = 8 A; IB = 800 mA; Tamb = 25 C - - 1.5 V
ton Turn-on time - - 300 - ns
ts Storage time - - 250 - ns
tf Fall time - - 170 - ns
toff Turn-off time IC = 5 A; IBon = 0.5 mA; IBoff = -0.5 mA; VCC = 12.5 V; Tamb = 25 C - 420 - ns
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 30 pF
fT Transition frequency VCE = 10 V; IC = 500 mA; f = 100 MHz; Tamb = 25 C - 160 - MHz

2410121948_Nexperia-MJD44H11J_C551528.pdf

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