MOSFET MIRACLE POWER MSA001C with 2 Milliohm Typical On Resistance and 110V Drain Source Voltage
Key Attributes
Model Number:
MSA001C
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
294A
RDS(on):
2.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF
Input Capacitance(Ciss):
11.55nF
Pd - Power Dissipation:
417W
Gate Charge(Qg):
172nC@10V
Mfr. Part #:
MSA001C
Package:
TO-220
Product Description
Product Overview
The MSA001C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 110V drain-source voltage, a continuous drain current of 294A at 25C, and a low on-resistance (RDS(on)) of 2.0m typ. at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is halogen-free and RoHS-compliant, making it suitable for load switch, PWM, and power management applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Halogen-free; RoHS-compliant
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | 110 | V | |||
| ID (Drain Current-Continuous) | TC = 25C | 294 | A | ||
| ID (Drain Current-Continuous) | TC = 100C | 185.5 | A | ||
| IDM (Drain Current-Pulsed) | 1175 | A | |||
| PD (Maximum Power Dissipation) | TC = 25C | 417 | W | ||
| EAS (Single Pulsed Avalanche Energy) | 1296 | mJ | |||
| TJ, TSTG (Operating and Store Temperature Range) | -55 | 150 | C | ||
| RJC (Thermal Resistance, Junction to Case) | 0.3 | C/W | |||
| RJA (Thermal Resistance, Junction to Ambient) | 34 | C/W | |||
| BVDSS (Drain-Source Breakdown Voltage) | VGS = 0V, ID = 250A | 110 | - | - | V |
| IDSS (Zero Gate Voltage Drain Current) | VDS = 110V, VGS = 0V | - | - | 1.0 | A |
| IGSS (Forward Gate Body Leakage Current) | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| VGS(th) (Gate Threshold Voltage) | VDS = VGS, ID = 250A | 2.0 | - | 4.0 | V |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = 10V, ID = 20A | - | 2.0 | 2.6 | m |
| RG (Gate Resistance) | VDS = VGS = 0V, f = 1.0MHz | - | 2.8 | - | |
| Ciss (Input Capacitance) | VDS = 55V, VGS = 0V, f = 1.0MHz | - | 11.55 | - | nF |
| Coss (Output Capacitance) | - | 1590 | - | pF | |
| Crss (Reverse Transfer Capacitance) | - | 37 | - | pF | |
| td(on) (Turn-On Delay Time) | VDD = 55V, VGS = 10V, ID = 20A, RGEN = 6.2 | - | 50 | - | ns |
| tr (Turn-On Rise Time) | - | 76 | - | ns | |
| td(off) (Turn-Off Delay Time) | - | 143 | - | ns | |
| tf (Turn-Off Fall Time) | - | 84 | - | ns | |
| Qg (Total Gate Charge) | VDS = 55V, VGS = 0 to 10V, ID = 20A | - | 172 | - | nC |
| Qgs (Gate-Source Charge) | - | 57 | - | nC | |
| Qgd (Gate-Drain Charge) | - | 40 | - | nC | |
| IS (Drain-Source Diode Forward Continuous Current) | VG = VD = 0V, Force Current | - | - | 294 | A |
| ISM (Maximum Pulsed Current) | - | - | 1175 | A | |
| VSD (Drain-Source Diode Forward Voltage) | VGS = 0V, IS = 20A | - | - | 1.2 | V |
| Trr (Body Diode Reverse Recovery Time) | IF = 20A, dIF/dt = 100A/s | - | 104 | - | ns |
| Qrr (Body Diode Reverse Recovery Charge) | IF = 20A, dIF/dt = 100A/s | - | 351 | - | nC |
2504151445_MIRACLE-POWER-MSA001C_C47361108.pdf
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