power transistor Nexperia PBSS303PX115 30 volt 5.1 amp PNP low VCEsat for compact electronic designs
Key Attributes
Model Number:
PBSS303PX,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
2.1W
Transition Frequency(fT):
130MHz
Type:
PNP
Current - Collector(Ic):
5.1A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
PBSS303PX,115
Package:
SOT-89
Product Description
Product Overview
The Nexperia PBSS303PX is a 30 V, 5.1 A PNP low VCEsat transistor designed for surface-mounted applications. It offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high collector current gain (hFE) at high IC. These features contribute to high efficiency with less heat generation and a smaller PCB area requirement compared to conventional transistors. The PBSS303PX is AEC-Q101 qualified, making it suitable for demanding applications such as DC-to-DC conversion, MOSFET gate driving, motor control, charging circuits, and power switches.
Product Attributes
- Brand: Nexperia
- Product Type: PNP low VCEsat transistor
- Package Type: SOT89 (SC-62/TO-243)
- Qualification: AEC-Q101 qualified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | -30 | V |
| IC | Collector current | - | - | - | -5.1 | A |
| ICM | Peak collector current | single pulse; tp 1 ms | - | - | -10.2 | A |
| RCEsat | Collector-emitter saturation resistance | IC = -4 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 32 | 48 | m |
| VCBO | Collector-base voltage | open emitter | - | - | -30 | V |
| VEBO | Emitter-base voltage | open collector | - | - | -5 | V |
| Ptot | Total power dissipation | Tamb 25 C | - | - | 2.1 | W |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint | - | - | 208 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 | - | - | 76 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | Device mounted on a ceramic PCB, Al2O3, standard footprint | - | - | 60 | K/W |
| Rth(j-sp) | Thermal resistance from junction to solder point | - | - | - | 20 | K/W |
| ICBO | Collector-base cut-off current | VCB = -30 V; IE = 0 A; Tamb = 25 C | - | - | -100 | nA |
| ICBO | Collector-base cut-off current | VCB = -30 V; IE = 0 A; Tj = 150 C | - | - | -50 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A; Tamb = 25 C | - | - | -100 | nA |
| hFE | DC current gain | VCE = -2 V; IC = -0.5 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 250 | 400 | - | - |
| hFE | DC current gain | VCE = -2 V; IC = -6 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | 100 | 160 | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -4 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | -130 | -190 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 5.1 A; IB = -255 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | -160 | -230 | mV |
| RCEsat | Collector-emitter saturation resistance | IC = -4 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 32 | 48 | m |
| VBEsat | Base-emitter saturation voltage | IC = -4 A; IB = -400 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | -0.93 | -1.05 | V |
| VBEon | Base-emitter turn-on voltage | VCE = -2 V; IC = -2 A; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | -0.76 | -0.85 | V |
| td | Delay time | - | - | 15 | - | ns |
| tr | Rise time | - | - | 55 | - | ns |
| ton | Turn-on time | - | - | 70 | - | ns |
| ts | Storage time | - | - | 215 | - | ns |
| tf | Fall time | - | - | 105 | - | ns |
| toff | Turn-off time | VCC = -12.5 V; IC = -3 A; IBon = -0.15 A; IBoff = 0.15 A; Tamb = 25 C | - | 320 | - | ns |
| fT | Transition frequency | VCE = -10 V; IC = -0.1 A; f = 100 MHz; Tamb = 25 C | - | 130 | - | MHz |
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 110 | 160 | pF |
2411121132_Nexperia-PBSS303PX-115_C551844.pdf
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