Nexperia BC846S115 Double Transistor NPN Type in SOT363 Package for Compact and Electronic Circuits

Name: Nexperia BC846S115 Double Transistor NPN Type in SOT363 Package for Compact and Electronic Circuits
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BC846S,115
Availability: InStock

Key Attributes

Model Number: BC846S,115

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

15nA

Pd - Power Dissipation:

300mW

Transition Frequency(fT):

100MHz

Type:

NPN

Number:

2 NPN

Current - Collector(Ic):

100mA

Collector - Emitter Voltage VCEO:

65V

Operating Temperature:

-65℃~+150℃

Mfr. Part #:

BC846S,115

Package:

TSSOP-6(SOT-363)

Product Description

Product Overview

The Nexperia BC846S is an NPN general-purpose double transistor housed in a compact SOT363 (SC-88) plastic package. Designed for efficiency, it integrates two transistors into a single component, reducing part count and saving board space without mutual interference. This device is ideal for general-purpose switching and small-signal amplification applications.

Product Attributes

Brand: Nexperia
Product Type: NPN Double Transistor
Package Type: SOT363 (SC-88)
Number of Leads: 6

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Per Transistor
VCEO	Collector-emitter voltage (open base)	-	-	-	65	V
IC	Collector current	-	-	-	100	mA
hFE	DC current gain	VCE = 5 V; IC = 2 mA; Tamb = 25 C	110	-	-	-
VCBO	Collector-base voltage (open emitter)	-	-	-	80	V
VEBO	Emitter-base voltage (open collector)	-	-	-	6	V
ICM	Peak collector current	-	-	-	200	mA
IBM	Peak base current (single pulse; tp 1 ms)	-	-	-	200	mA
Ptot	Total power dissipation (Tamb 25 C) [1]	-	-	-	220	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-65 to 150 C	-	-	-	-
Tstg	Storage temperature	-65 to 150 C	-	-	-	-
Per Device
Ptot	Total power dissipation (Tamb 25 C) [1]	-	-	-	300	mW
Rth(j-a)	Thermal resistance junction to ambient (free air) [1]	-	-	-	416	K/W
Rth(j-a)	Thermal resistance junction to ambient (free air) [1]	-	-	-	568	K/W
Rth(j-sp)	Thermal resistance junction to solder point	-	-	-	230	K/W
V(BR)CBO	Collector-base breakdown voltage	IC = 100 A; IE = 0 A; Tamb = 25 C	80	-	-	V
V(BR)CEO	Collector-emitter breakdown voltage	IC = 2 mA; IB = 0 A; Tamb = 25 C	65	-	-	V
V(BR)EBO	Emitter-base breakdown voltage	IC = 0 A; IE = 100 A; Tamb = 25 C	6	-	-	V
ICBO	Collector-base cut-off current	VCB = 30 V; IE = 0 A; Tamb = 25 C	-	-	15	nA
ICBO	Collector-base cut-off current	VCB = 30 V; IE = 0 A; Tj = 150 C	-	-	5	A
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 A; Tamb = 25 C	-	-	100	nA
hFE	DC current gain	VCE = 5 V; IC = 2 mA; Tamb = 25 C	110	-	-	-
hFE	DC current gain	IC = 10 mA; IB = 0.5 mA; Tamb = 25 C	-	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 100 mA; IB = 5 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C	-	-	300	mV
VBEsat	Base-emitter saturation voltage	IC = 10 mA; IB = 0.5 mA; Tamb = 25 C	-	770	-	mV
VBE	Base-emitter voltage	VCE = 5 V; IC = 2 mA; Tamb = 25 C	580	-	700	mV
Cc	Collector capacitance	VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C	-	-	1.5	pF
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C	100	-	-	MHz

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.

Ordering Information:

Package Type: TSSOP6
Name: SOT363
Description: Plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body

Marking Code: 4F% (% = placeholder for manufacturing site code)

Package Outline Dimensions (mm):

See Figure 7 in the original document for detailed dimensions.

Soldering Footprint:

Reflow soldering footprint for TSSOP6 (SOT363) - See Figure 8.
Wave soldering footprint for TSSOP6 (SOT363) - See Figure 9.

2410010302_Nexperia-BC846S-115_C133184.pdf

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