Power TRIAC MSKSEMI BTA16-600B MS with 600 Volt Peak Off State Voltage and 16 Amp Continuous Current
Key Attributes
Model Number:
BTA16-600B(MS)
Product Custom Attributes
Current - Gate Trigger(Igt):
70mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
160A
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTA16-600B(MS)
Package:
TO-220
Product Description
Product Overview
The BTA16-XXXB(MS) series of TRIACs, featuring a parallel resistor between Gate and Cathode, are specifically recommended for applications such as straight hair dryers, igniters, and anion generators. These devices offer reliable performance with high repetitive peak off-state voltages and continuous on-state current capabilities.
Product Attributes
- Brand: MSKSEMI
- Product Series: BTA16-XXXB(MS)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Repetitive peak off-state voltage | VDRM | 600/800 | V | (Tj=25) |
| Repetitive peak reverse voltage | VRRM | 600/800 | V | (Tj=25) |
| RMS on-state current | IT(RMS) | 16 | A | (TC=75) |
| Non repetitive surge peak on-state current | ITSM | 160 | A | (full cycle, F=50Hz) |
| I2t value for fusing | I2t | 128 | A2s | (tp=10ms) |
| Critical rate of rise of on-state current | dI/dt | 50 | A/s | (IG =2IGT) |
| Peak gate current | IGM | 4 | A | |
| Average gate power dissipation | PG(AV) | 1 | W | |
| Peak gate power | PGM | 5 | W | |
| Storage junction temperature range | Tstg | -40-150 | ||
| Operating junction temperature range | Tj | -40-125 | ||
| Gate Trigger Current (IGT) | IGT | MAX 50 | mA | VD =12V, RL =33, Quadrants -- |
| Gate Trigger Voltage (VGT) | VGT | MAX 1.3 | V | Quadrants -- |
| Latching Current (IL) | IL | MAX 70 | mA | IG =1.2IGT, Quadrants - |
| Holding Current (IH) | IH | MAX 60 | mA | IT =100mA, Quadrants - |
| Repetitive peak off-state voltage | VDRM | -600V / -800V | V | |
| On-state voltage (VTM) | VTM | 1.5 (MAX) | V | ITM =22.5A, tp=380s, Tj=25 |
| Peak on-state current | ITM | 22.5 | A | tp=380s, Tj=25 |
| Off-state current (IDRM) | IDRM | 5 (MAX) | A | VD =VDRM, Tj=25 |
| Reverse leakage current (IRRM) | IRRM | 1 (MAX) | mA | VR =VRRM, Tj=125 |
| Thermal resistance (junction to case) | Rth(j-c) | 2.1 | /W | (AC) |
Package Information
| Package Type | Quantity per Tube/Box |
|---|---|
| TO-220 | 50/One tube, 1000/a box of REEL |
Package Dimensions (TO-220)
| Dimension | Symbol | Min. | Typ. | Max. | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|
| Millimeters | Inches | ||||||
| A | A | 15.20 | 15.90 | 0.598 | 0.625 | ||
| a1 | a1 | 3.75 | 0.147 | ||||
| a2 | a2 | 13.00 | 14.00 | 0.511 | 0.551 | ||
| B | B | 10.00 | 10.40 | 0.393 | 0.409 | ||
| b1 | b1 | 0.61 | 0.88 | 0.024 | 0.034 | ||
| b2 | b2 | 1.23 | 1.32 | 0.048 | 0.051 | ||
| C | C | 4.40 | 4.60 | 0.173 | 0.181 | ||
| c1 | c1 | 0.49 | 0.70 | 0.019 | 0.027 | ||
| c2 | c2 | 2.40 | 2.72 | 0.094 | 0.107 | ||
| e | e | 2.40 | 2.70 | 0.094 | 0.106 | ||
| F | F | 6.20 | 6.60 | 0.244 | 0.259 | ||
| I | I | 3.75 | 3.85 | 0.147 | 0.151 | ||
| I4 | I4 | 15.80 | 16.80 | 0.622 | 0.661 | ||
| L | L | 2.65 | 2.95 | 0.104 | 0.116 | ||
| l2 | l2 | 1.14 | 1.70 | 0.044 | 0.066 | ||
| l3 | l3 | 1.14 | 1.70 | 0.044 | 0.066 | ||
| M | M | 2.60 | 0.102 | ||||
2404151058_MSKSEMI-BTA16-600B-MS_C22365374.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
