Motor drive enhancement mode MOSFET MIRACLE POWER MD4001X featuring rugged N channel and P channel technology
Key Attributes
Model Number:
MD4001X
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
20A
RDS(on):
50mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
56pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
87pF
Pd - Power Dissipation:
16W
Input Capacitance(Ciss):
785pF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
MD4001X
Package:
PDFN-8(3x3)
Product Description
Product Overview
The MD4001X is an N-channel and P-channel enhancement mode MOSFET from Miracle Technology Co., Ltd., featuring advanced Miracle Technology. This device is designed for reliability and ruggedness, with 100% EAS guaranteed. It is particularly well-suited for motor drive applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Miracle Technology
- Channel Type: N-Channel and P-Channel
- Mode: Enhancement Mode
- Reliability: Reliable and Rugged
- Testing: 100% EAS Guaranteed
Technical Specifications
| Feature | N-MOS | P-MOS | Unit |
|---|---|---|---|
| Key Features | |||
| Voltage Rating | 40V | -40V | V |
| Continuous Drain Current (TC=25C) | 20A | -15A | A |
| RDS(ON) (VGS=10V) | 18m (Typ.) | 32m (Typ.) | |
| RDS(ON) (VGS=4.5V) | 24m (Typ.) | 40m (Typ.) | |
| Absolute Maximum Ratings (TA = 25C unless otherwise noted) | |||
| Drain-Source Voltage (VDS) | 40 | -40 | V |
| Gate-Source Voltage (VGS) | 20 | 20 | V |
| Drain Current-Continuous (TC=25C) | 20 | -15 | A |
| Drain Current-Continuous (TC=100C) | 13 | -9 | A |
| Drain Current-Continuous (TA=25C) | 8 | -7 | A |
| Drain Current-Continuous (TA=70C) | 7 | -5 | A |
| Drain Current-Pulsed (IDM) | 80 | -60 | A |
| Avalanche Energy, Single pulse (EAS) | 12 | 20 | mJ |
| Avalanche Current (IAS) | 7 | -9 | A |
| Total Power Dissipation (TC=25C) | 16 | 16 | W |
| Total Power Dissipation (TC=100C) | 6 | 6 | W |
| Total Power Dissipation (TA=25C) | 2.8 | 2.8 | W |
| Total Power Dissipation (TA=70C) | 1.8 | 1.8 | W |
| Junction and Storage Temperature Range (TJ, TSTG) | -55 to 150 | C | |
| Thermal Characteristics | |||
| Thermal Resistance Junction-Case (RJC) | 7.8 | 7.8 | C/W |
| Thermal Resistance Junction-Ambient (RJA) | 45 | 45 | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||
| Drain-Source Breakdown Voltage (BVDSS) (VGS = 0V, ID = 250A) | 40 | - | V |
| Drain-Source Breakdown Voltage (BVDSS) (VGS = 0V, ID = -250A) | - | -40 | V |
| Zero Gate Voltage Drain Current (IDSS) (VDS = 40V, VGS = 0V) | - | 1 | A |
| Zero Gate Voltage Drain Current (IDSS) (VDS = -40V, VGS = 0V) | - | 1 | A |
| Forward Gate Body Leakage Current (IGSS) (VDS = 0V, VGS = 20V) | 100 | 100 | nA |
| Gate Threshold Voltage (VGS(th)) (VDS = VGS, ID = 250A) | 1.0 - 2.5 | 1.0 - 2.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) (VGS = 10V, ID = 8A) | - 25 | - 50 | m |
| Static Drain-Source On-Resistance (RDS(on)) (VGS = 4.5V, ID = 6A) | - 34 | - 60 | m |
| Input Capacitance (Ciss) (VDS = 20V, VGS = 0V, f = 1.0MHz) | 360 | 785 | pF |
| Output Capacitance (Coss) | 61 | 87 | pF |
| Reverse Transfer Capacitance (Crss) | 31 | 56 | pF |
| Turn-On Delay Time (td(on)) | 7 | 8 | ns |
| Turn-On Rise Time (tr) | 9 | 12 | ns |
| Turn-Off Delay Time (td(off)) | 16 | 30 | ns |
| Turn-Off Fall Time (tf) | 6 | 18 | ns |
| Total Gate Charge (Qg) | 8 | 18 | nC |
| Gate-Source Charge (Qgs) | 2.6 | 4.0 | nC |
| Gate-Drain Charge (Qgd) | 3.2 | 4.4 | nC |
| Drain-Source Diode Characteristics | |||
| Continuous Source Current (IS) | 20 | -15 | A |
| Pulse Source Current (ISM) | 80 | -60 | A |
| Drain-Source Diode Forward Voltage (VSD) (ISD = 1A) | - 1.3 | - | V |
| Drain-Source Diode Forward Voltage (VSD) (ISD = -1A) | - | - 1.3 | V |
| Reverse Recovery Time (trr) | 16 | 22 | ns |
| Reverse Recovery Charge (Qrr) | 29 | 34 | nC |
2408011701_MIRACLE-POWER-MD4001X_C34373746.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
