Fast Switching Power MOSFET MIRACLE POWER MPC11N40 Featuring 100 Percent Avalanche Tested Reliability
Key Attributes
Model Number:
MPC11N40
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
11A
RDS(on):
550mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Output Capacitance(Coss):
124pF
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
1.126nF
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
MPC11N40
Package:
TO-220
Product Description
Product Overview
The MPC11N40 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. It features a 400V drain-source voltage, 11A continuous drain current, and a typical on-resistance of 0.46 at VGS = 10V. This MOSFET is designed for fast switching and low Crss, making it suitable for power switch circuits in adaptors and chargers. It is 100% avalanche tested.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Model: MPC11N40
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Drain-Source Voltage | 400 | V | ||||
| Drain Current-Continuous (Tc = 25C) | 11 | A | ||||
| RDS(ON) (Typ.) | VGS = 10V | 0.46 | 0.55 | |||
| Low Crss | ||||||
| Fast Switching | ||||||
| 100% Avalanche Tested | ||||||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 400 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous (TC =25C) | 11 | A | |||
| ID | Drain Current-Continuous (TC =100C) | 6.3 | A | |||
| IDM | Drain Current-Pulsed | b | 40 | A | ||
| PD | Maximum Power Dissipation | @ TJ =25C | 100 | W | ||
| dv/dt | Peak Diode Recovery dv/dt | c | 5.0 | V/ns | ||
| EAS | Single Pulsed Avalanche Energy | d | 450 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 to 150 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.25 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62.5 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 400 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 400V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | - | 4 | V |
| On Characteristics | ||||||
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 5.5A | - | 0.46 | 0.55 | |
| gfs | Forward Transconductance | VDS=15V, ID=5.5A | - | 8.5 | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1126 | - | pF |
| Coss | Output Capacitance | - | 124 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 8 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 200V, ID =11A, VGS=10V | - | 18 | - | ns |
| tr | Turn-On Rise Time | - | 23 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 41 | - | ns | |
| tf | Turn-Off Fall Time | - | 19 | - | ns | |
| Qg | Total Gate Charge | VDS = 320V, ID =11A, VGS = 10V | - | 23 | - | nC |
| Qgs | Gate-Source Charge | - | 5.2 | - | nC | |
| Qgd | Gate-Drain Charge | - | 8.5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 10 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 40 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 11A | - | - | 1.5 | V |
| Trr | Body Diode Reverse Recovery Time | IS=11A,VGS = 0V, dIF/dt=100A/us | - | 376 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IS=11A,VGS = 0V, dIF/dt=100A/us | - | 2560 | - | nC |
Notes:
a. TJ=+25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. ISD =11A, dIF/dt 100A/us,VDDBVDS, Start TJ=25
d. L = 10mH, VDD=50V,IAS = 9.5A,RG=25 Starting TJ=25 .
2408011701_MIRACLE-POWER-MPC11N40_C34373719.pdf
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