High Voltage N Channel MOSFET NH NPS18N50F with 300 Milliohm RDS ON and 18A Continuous Drain Current
Key Attributes
Model Number:
NPS18N50F
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
18A
RDS(on):
380mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.9pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.6nF@25V
Pd - Power Dissipation:
17W
Gate Charge(Qg):
46nC@250V
Mfr. Part #:
NPS18N50F
Package:
TO-220F
Product Description
Product Overview
The NPS18N50F is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and speed, it features low RDS(ON) for reduced power loss and low gate charge for fast switching. Its high EAS rating ensures reliability, making it suitable for demanding applications such as AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies. This MOSFET is 100% UIS and RG tested for quality assurance.
Product Attributes
- Brand: Niuhang (NH)
- Origin: Guangdong, China
- Product Line: FF
- Certifications: RoHS Compliant, Pb-Free
- Package: TO-220F
Technical Specifications
| Model ID | VDS Min.@Tj (V) | ID Min.@Ta (A) | RDS(ON) Type@10V (m) |
|---|---|---|---|
| NPS18N50F | 500 | 18 | 300.00 |
Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified)
| Parameter | Test Conditions | Symbol | Ratings | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 500 | V | |
| Gate-Source Voltage | VGS | 30 | V | |
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 18 | A |
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 12 | A |
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | 72 | A |
| Maximum Power Dissipation | Ta= 25 | PD | 43 | W |
| Power Dissipation Derating Factor | Above 25 Ta= 100 | DF | 0.34 | W/ |
| Junction Temperature | TJ | -55 to 150 | ||
| Storage Temperature Range | TSTD | -55 to 150 | ||
| Avalanche Current, Single Pulse (Note 1) | L= 0.5 mH | IAS | 60.0 | A |
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH, VDD= 250 V | EAS | 900 | mJ |
Thermal Characteristics (Ta=25 Unless Otherwise Specified)
| Parameter | Test Conditions | Symbol | Typ. | Unit |
|---|---|---|---|---|
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 62.5 | /W |
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 2.90 | /W |
Electrical Characteristics (Ta=25 Unless Otherwise Specified)
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Static Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | BV DSS | 500 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA, Reference 25 | BV DSS/T J | -- | 0.594 | -- | V/ |
| Drain-Source Leakage Current | VDS= 500 V, VGS=0V | I DSS | -- | -- | 1.0 | uA |
| Gate-Body Leakage Current | VGS= 30 V, VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 9 A, VDS= 15 V | gfs | -- | 16 | -- | S |
| Static On Characteristics | ||||||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 9 A, VGS= 10 V | R DS(ON) | -- | 300.00 | 380.00 | m |
| Drain-Source On Resistance | ID= 9 A, VGS= 4.5 V | R DS(ON) | -- | 345.00 | 509.20 | m |
| Dynamic Characteristics | ||||||
| Gate Resistance | VGS=0V, VDS=0V, Freq.=1MHz | R g | -- | 2.80 | -- | |
| Input Capacitance | VDS= 25 V | C iss | -- | 2600.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 230.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 5.9 | -- | pF |
| Switching Parameters | ||||||
| Turn-On Delay Time | VDS= 250 V | t d(on) | -- | 28.0 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 47.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 60.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 40.0 | -- | ns |
| Gate Charge Parameters | ||||||
| Total Gate Charge | VDS= 250 V | Q g | -- | 46.0 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 13.5 | -- | nC |
| Gate-Drain Charge | ID= 9 A | Q gd | -- | 16.2 | -- | nC |
| Drain-Source Diode Characteristics And Maximum Ratings | ||||||
| Max. Diode Forward Current | I S | -- | -- | 18 | A | |
| Max. Pulsed Forward Current | I SM | -- | -- | 63 | A | |
| Diode Forward Voltage | ID= 9 A, VGS=0V | V SD | -- | 1.08 | 1.5 | V |
| Reverse Recovery Time | ID= 9 A, di/dt= 100 A/us | t rr | -- | 450 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V, VDS= 250 V | Q rr | -- | 4755.0 | -- | uC |
Outline Dimensions (TO-220F)
| Dim. | Min. | Typ. | Max. | Inches Min. | Inches Typ. | Inches Max. |
|---|---|---|---|---|---|---|
| A | 9.25 | -- | 10.75 | 0.36 | -- | 0.42 |
| B | 2.30 | -- | 2.90 | 0.09 | -- | 0.11 |
| C | 4.20 | -- | 5.20 | 0.17 | -- | 0.20 |
| D | 0.35 | -- | 0.75 | 0.01 | -- | 0.03 |
| E | 14.80 | -- | 16.80 | 0.58 | -- | 0.66 |
| F | 8.25 | -- | 9.75 | 0.32 | -- | 0.38 |
| G | 12.15 | -- | 14.15 | 0.48 | -- | 0.56 |
| H | 2.40 | -- | 3.00 | 0.09 | -- | 0.12 |
| J | 1.10 | -- | 1.50 | 0.04 | -- | 0.06 |
| K | 0.60 | -- | 1.00 | 0.02 | -- | 0.04 |
| M | 2.20 | -- | 3.00 | 0.09 | -- | 0.12 |
| O | 2.70 | -- | 3.50 | 0.11 | -- | 0.14 |
| P | 2.25 | -- | 2.85 | 0.09 | -- | 0.11 |
Packing Information
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) |
|---|---|---|---|---|---|
| TO-220F | Tube Packaging | 560x155x55 | 1000 | 570284185 | 5000 |
2411011351_NH-NPS18N50F_C41784110.pdf
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