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quality switching and amplification transistor Nexperia BC817DS115 NPN NPN general purpose double transistor factory
quality switching and amplification transistor Nexperia BC817DS115 NPN NPN general purpose double transistor factory

switching and amplification transistor Nexperia BC817DS115 NPN NPN general purpose double transistor

Key Attributes
Model Number: BC817DS,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
370mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC817DS,115
Package:
SC-74(TSOP-6)
Product Description

Product Overview

The Nexperia BC817DS is an NPN/NPN general-purpose double transistor designed for switching and amplification applications. This device offers reduced component count and pick and place costs, making it an efficient choice for various electronic designs. It is AEC-Q101 qualified, ensuring suitability for automotive applications.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN/NPN general purpose double transistors
  • Complementary PNP/PNP: BC807DS
  • Complementary NPN/PNP: BC817DPN
  • Qualification: AEC-Q101 qualified

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage Open base - - 45 V
IC Collector current - - - 500 mA
ICM Peak collector current Single pulse; tp 1 ms - - 1 A
hFE DC current gain VCE = 1 V; IC = 100 mA 160 - 400 [1]
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 5 V
IBM Peak base current Single pulse; tp 1 ms - - 200 mA
Ptot Total power dissipation Tamb 25 C - - 370 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Per device
Ptot Total power dissipation Tamb 25 C - - 600 mW
Thermal characteristics
Rth(j-a) Thermal resistance from junction to ambient In free air [1] - - 208 K/W
Characteristics (Tamb = 25 C unless otherwise specified)
ICBO Collector-base cut-off current VCB = 20 V; IE = 0 A - - 100 nA
ICBO Collector-base cut-off current VCB = 20 V; IE = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA
hFE DC current gain VCE = 1 V; IC = 100 mA [1] 160 - 400 -
hFE DC current gain VCE = 1 V; IC = 500 mA [1] 40 - - -
VCEsat Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA [1] - - 700 mV
VBE Base-emitter voltage VCE = 1 V; IC = 500 mA [1] [2] - - 1.2 V
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz - 5 - pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 - - MHz

[1] Pulsed test: tp 300 s; 0.02

[2] VBE decreases by approximately -2 mV/k with increasing temperature.


2410010302_Nexperia-BC817DS-115_C128436.pdf

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