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quality Low VCEsat PNP transistor Nexperia PBSS5330X 115 suitable for buzzers motors and relay switching tasks factory
quality Low VCEsat PNP transistor Nexperia PBSS5330X 115 suitable for buzzers motors and relay switching tasks factory

Low VCEsat PNP transistor Nexperia PBSS5330X 115 suitable for buzzers motors and relay switching tasks

Key Attributes
Model Number: PBSS5330X,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.6W
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS5330X,115
Package:
SOT-89
Product Description

Product Overview

The Nexperia PBSS5330X is a PNP low VCEsat (BISS) transistor designed for high efficiency and reduced heat generation. It features a high collector current capability, making it suitable for power management applications such as DC/DC converters, supply line switching, battery chargers, and LCD backlighting. It also serves as a peripheral driver for low supply voltage applications and inductive loads like relays, buzzers, and motors. The transistor is housed in a SOT89 (SC-62) package with a collector pad for enhanced heat transfer.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Package: SOT89 (SC-62)
  • Transistor Type: PNP
  • Technology: Low VCEsat (BISS)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-emitter voltage VCEO Open base - - -30 V
Collector current (DC) IC Note 4 - - -3 A
Peak collector current ICM Limited by Tj(max) - - -5 A
Equivalent on-resistance RCEsat IC = -3 A; IB = -300 mA; note 1 - 80 107 m
Collector-base cut-off current ICBO VCB = -30 V; IE = 0 A - - -100 nA
Collector-emitter cut-off current ICES VCE = -30 V; VBE = 0 V - - -100 nA
Emitter-base cut-off current IEBO VEB = -5 V; IC = 0 A - - -100 nA
DC current gain hFE VCE = -2 V; IC = -0.1 A 200 - - -
DC current gain hFE VCE = -2 V; IC = -0.5 A 200 - - -
DC current gain hFE VCE = -2 V; IC = -1 A; note 1 175 - 450 -
DC current gain hFE VCE = -2 V; IC = -2 A; note 1 140 - - -
DC current gain hFE VCE = -2 V; IC = -3 A; note 1 100 - - -
Collector-emitter saturation voltage VCEsat IC = -0.5 A; IB = -50 mA - - -70 mV
Collector-emitter saturation voltage VCEsat IC = -1 A; IB = -50 mA - - -130 mV
Collector-emitter saturation voltage VCEsat IC = -2 A; IB = -100 mA - - -240 mV
Collector-emitter saturation voltage VCEsat IC = -3 A; IB = -300 mA; note 1 - - -320 mV
Base-emitter saturation voltage VBEsat IC = -2 A; IB = -100 mA - - -1.1 V
Base-emitter saturation voltage VBEsat IC = -3 A; IB = -300 mA; note 1 - - -1.2 V
Base-emitter turn-on voltage VBEon VCE = -2 V; IC = -1 A -1.0 - - V
Transition frequency fT IC = -100 mA; VCE = -5 V; f = 100 MHz 100 - - MHz
Collector capacitance Cc VCB = -10 V; IE = ie = 0 A; f = 1 MHz - - 45 pF

2410121843_Nexperia-PBSS5330X-115_C282551.pdf

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