N Channel Enhancement Mode Power MOSFET NH NTH084N06C with High Drain Current and Low On Resistance
Key Attributes
Model Number:
NTH084N06C
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
100A
RDS(on):
8.4mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
3.18nF@30V
Pd - Power Dissipation:
107W
Gate Charge(Qg):
-
Mfr. Part #:
NTH084N06C
Package:
TO-220C
Product Description
Product Overview
The NTH084N06C is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching, making it suitable for demanding applications. Its high EAS rating ensures high reliability. Typical applications include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and printed circuit board control. It is also suitable for automotive electronics and UPS.
Product Attributes
- Brand: Niuhang (NH)
- Origin: Guangdong, China
- Certifications: RoHS Compliant, Pb-Free
- Package Type: TO-220C
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Continuous Drain Current | @Ta=25 | ID | 73 | A | ||
| RDS(ON) Type | @10V | RDS(ON) | 6.30 | 8.40 | m | |
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | Ta= 25 | ID | 73 | A | ||
| Continuous Drain Current | Ta= 100 | ID | 58 | A | ||
| Drain Current-Pulsed | TJ< 175 | IDM | 292 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 107 | W | ||
| Maximum Power Dissipation | Ta= 100 | PD | 54 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | 0.71 | W/ | ||
| Junction Temperature | TJ | -55 | 175 | |||
| Storage Temperature Range | TSTD | -55 | 175 | |||
| Avalanche Current,Single Pulse | L= 0.5 mH | IAS | 33 | A | ||
| Single Pulse Avalanche Energy | L= 0.5 mH,VDD= 30 V | EAS | 272 | mJ | ||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 60 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.057 | -- | V/ |
| Drain-Source Leakage Current | VDS= 60 V,VGS=0V | IDSS | -- | -- | 1 | uA |
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | IGSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 20 A,VDS= 5 V | gfs | -- | 55 | -- | S |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 20 A,VGS= 10 V | R DS(ON) | -- | 6.30 | 8.40 | m |
| Drain-Source On Resistance | ID= 20 A,VGS= 4.5 V | R DS(ON) | -- | 7.25 | 11.26 | m |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | Rg | -- | 1.72 | -- | |
| Input Capacitance | VDS= 30 V | C iss | -- | 3180.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 210.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 190.0 | -- | pF |
| Turn-On Delay Time | VDS= 30 V | td(on) | -- | 15.5 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | tr | -- | 29.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | td(off) | -- | 30.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | tf | -- | 2.9 | -- | ns |
| Total Gate Charge | VDS= 30 V | Qg | -- | 60.5 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Qgs | -- | 17.0 | -- | nC |
| Gate-Drain Charge | ID= 20 A | Qgd | -- | 30.0 | -- | nC |
| Max. Diode Forward Current | IS | -- | -- | 73 | A | |
| Max. Pulsed Forward Current | ISM | -- | -- | 256 | A | |
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | -- | 0.85 | 1.2 | V |
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | trr | -- | 75 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 30 V | Qrr | -- | 46.0 | -- | uC |
| Physical Characteristics | ||||||
| Weight | 2.057 | (0.07255) | Grams (Ounce) | |||
| Package | TO-220C | |||||
2411070957_NH-NTH084N06C_C41784116.pdf
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