NPN NPN Resistor Equipped Transistor PUMH24 115 from Nexperia designed to reduce pick and place costs

Name: NPN NPN Resistor Equipped Transistor PUMH24 115 from Nexperia designed to reduce pick and place costs
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: PUMH24,115
Availability: InStock

Key Attributes

Model Number: PUMH24,115

Product Custom Attributes

Output Voltage(VO(on)):

Input Resistor:

130kΩ

Resistor Ratio:

1.2

Collector - Emitter Voltage VCEO:

50V

Mfr. Part #:

PUMH24,115

Package:

SOT-363

Product Description

Nexperia NPN/NPN Resistor-Equipped Transistors (RET)

Product Overview

The Nexperia PEMH24 and PUMH24 are NPN/NPN Resistor-Equipped Transistors (RET) designed to simplify circuit design and reduce component count. These devices feature built-in bias resistors, making them ideal for low current peripheral driver applications, control of IC inputs, and as replacements for general-purpose transistors in digital applications. Their integrated design leads to reduced pick-and-place costs.

Product Attributes

Brand: Nexperia
Type: NPN/NPN Resistor-Equipped Transistors (RET)
Built-in Resistors: R1 = 100 k, R2 = 100 k

Technical Specifications

Model	Package	NPN/PNP Complement	Description	Marking Code [1]
PEMH24	SOT666	PEMD24	Plastic surface mounted package; 6 leads	6T
PUMH24	SOT363 (SC-88)	PUMD24	Plastic surface mounted package; 6 leads	H8*

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Per Transistor
VCEO	Collector-emitter voltage	Open base	-	-	50	V
IO	Output current (DC)	-	-	-	20	mA
R1	Bias resistor 1 (input)	-	70	100	130	k
R2/R1	Bias resistor ratio	-	0.8	1	1.2	-
VCBO	Collector-base voltage	Open emitter	-	-	50	V
VEBO	Emitter-base voltage	Open collector	-	-	10	V
VI	Input voltage	Positive	-	-	+40	V
VI	Input voltage	Negative	-	-	-10	V
ICM	Peak collector current	-	-	-	100	mA
Ptot	Total power dissipation	Tamb 25 C (SOT363 [1])	-	-	200	mW
Ptot	Total power dissipation	Tamb 25 C (SOT666 [1][2])	-	-	200	mW
Tstg	Storage temperature	-	-65	-	+150	C
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	+150	C
Per Device
Ptot	Total power dissipation	Tamb 25 C (SOT363 [1])	-	-	300	mW
Ptot	Total power dissipation	Tamb 25 C (SOT666 [1][2])	-	-	300	mW
Rth(j-a)	Thermal resistance junction to ambient	In free air (SOT363 [1])	-	-	625	K/W
Rth(j-a)	Thermal resistance junction to ambient	In free air (SOT666 [1][2])	-	-	625	K/W
Rth(j-a)	Thermal resistance junction to ambient	In free air (SOT363 [1])	-	-	416	K/W
Rth(j-a)	Thermal resistance junction to ambient	In free air (SOT666 [1][2])	-	-	416	K/W
ICBO	Collector-base cut-off current	VCB = 50 V; IE = 0 A	-	-	100	nA
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A	-	-	1	A
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A; Tj = 150 C	-	-	50	A
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 A	-	-	50	A
hFE	DC current gain	VCE = 5 V; IC = 5 mA	80	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 5 mA; IB = 0.25 mA	-	-	150	mV
VI(off)	Off-state input voltage	VCE = 5 V; IC = 100 A	-	1.1	0.5	V
VI(on)	On-state input voltage	VCE = 0.3 V; IC = 1 mA	3	1.5	-	V
Cc	Collector capacitance	VCB = 10 V; IE = 0 A; f = 1 MHz	-	-	2.5	pF

Applications

Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications

Package Outline

Refer to Figures 5 and 6 for package outline details of SOT363 (SC-88) and SOT666 respectively.

Packing Information

Type Number	Package	Description	Packing Quantity
PEMH24	SOT666	2 mm pitch, 8 mm tape and reel	-315
PEMH24	SOT666	4 mm pitch, 8 mm tape and reel	-115
PUMH24	SOT363	4 mm pitch, 8 mm tape and reel; T1	-115
PUMH24	SOT363	4 mm pitch, 8 mm tape and reel; T2	-125

2410121745_Nexperia-PUMH24-115_C553538.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.

NPN NPN Resistor Equipped Transistor PUMH24 115 from Nexperia designed to reduce pick and place costs