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quality Nexperia PBRP113ZT 215 PNP Performance Based Resistor Equipped Transistor with High hFE in SOT23 Package factory
quality Nexperia PBRP113ZT 215 PNP Performance Based Resistor Equipped Transistor with High hFE in SOT23 Package factory

Nexperia PBRP113ZT 215 PNP Performance Based Resistor Equipped Transistor with High hFE in SOT23 Package

Key Attributes
Model Number: PBRP113ZT,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
1.3kΩ
Resistor Ratio:
11
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
PBRP113ZT,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PBRP113ZT is a 40 V, 600 mA PNP Performance-Based Resistor-Equipped Transistor (RET) in a compact SOT23 package. Designed for digital applications in automotive and industrial segments, it simplifies circuit design by integrating bias resistors, reducing component count, and lowering pick-and-place costs. This device offers a low collector-emitter saturation voltage (VCEsat) and high current gain (hFE), making it suitable for switching loads and medium current peripheral driving.

Product Attributes

  • Brand: Nexperia
  • Product Type: PNP Performance-Based Resistor-Equipped Transistor (PB RET)
  • Package Type: SOT23 (TO-236AB)
  • Complementary NPN: PBRN113ZT
  • Date of Release: March 31, 2021

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - -40 V
IO Output current Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint. - - -600 mA
R1 Bias resistor 1 Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint. 0.7 1 1.3 k
R2/R1 Bias resistor ratio Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint. 9 10 11
VCBO Collector-base voltage Open emitter - - -40 V
VEBO Emitter-base voltage Open collector - - -5 V
VI Input voltage Positive - - 5 V
VI Input voltage Negative - - -10 V
IORM Repetitive peak output current tp 1 ms; 0.33 - - -800 mA
Ptot Total power dissipation Tamb 25 C (Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint) - - 250 mW
Ptot Total power dissipation Tamb 25 C (Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated, mounting pad for collector 1 cm2) - - 370 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -55 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient In free air; Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint. - 500 - K/W
Rth(j-a) Thermal resistance from junction to ambient Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated, mounting pad for collector 1 cm2. - 338 - K/W
Rth(j-sp) Thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated, mounting pad for collector 1 cm2. - 105 - K/W
V(BR)CBO Collector-base breakdown voltage IC = -100 A; IE = 0 A; Tamb = 25 C -40 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = -10 mA; IB = 0 A; Tamb = 25 C -40 - - V
ICBO Collector-base cut-off current VCB = -30 V; IE = 0 A; Tamb = 25 C - - -100 nA
ICEO Collector-emitter cut-off current VCE = -30 V; IB = 0 A; Tamb = 25 C - - -0.5 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 C - - -0.8 mA
VCEsat Collector-emitter saturation voltage VCE = -5 V; IC = -50 mA; Tamb = 25 C - -35 -45 mV
VCEsat Collector-emitter saturation voltage VCE = -5 V; IC = -300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - -70 -100 mV
VCEsat Collector-emitter saturation voltage VCE = -5 V; IC = -500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - -200 -300 mV
VCEsat Collector-emitter saturation voltage IC = -600 mA; IB = -6 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - -450 -750 mV
VI(off) Off-state input voltage VCE = -5 V; IC = -100 A; Tamb = 25 C -0.3 -0.5 -1 V
VI(on) On-state input voltage VCE = -0.3 V; IC = -20 mA; Tamb = 25 C -0.4 -0.7 -1.4 V
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - 11 - pF

2410121850_Nexperia-PBRP113ZT-215_C551815.pdf

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