Integrated resistor PNP transistor Nexperia PBRP113ET 215 for industrial digital switching and load driving
Nexperia PBRP113ET PNP Performance-Based Resistor-Equipped Transistor
Product Overview
The Nexperia PBRP113ET is a PNP Performance-Based Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. This device features a low collector-emitter saturation voltage (VCEsat) and high current gain (hFE), simplifying circuit design by reducing component count and pick-and-place costs due to its integrated bias resistors. It is ideal for switching loads and as a medium current peripheral driver.
- Brand: Nexperia
- Product Type: PNP Performance-Based Resistor-Equipped Transistor (RET)
- Package Type: SOT23 (TO-236AB)
- Complementary NPN: PBRN113ET
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | -40 | V |
| IO | Output current | [1] | - | - | -600 | mA |
| R1 | Bias resistor 1 | [2] | 0.7 | 1 | 1.3 | k |
| R2/R1 | Bias resistor ratio | [2] | 0.9 | 1 | 1.1 | - |
| V(BR)CBO | Collector-base breakdown voltage | IC = -100 A; IE = 0 A; Tamb = 25 C | -40 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = -10 mA; IB = 0 A; Tamb = 25 C | -40 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = -30 V; IE = 0 A; Tamb = 25 C | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A; Tamb = 25 C | - | - | -0.5 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A; Tamb = 25 C | - | - | -4 | mA |
| hFE | DC current gain | VCE = -5 V; IC = -50 mA; Tamb = 25 C | 40 | 65 | - | V |
| VCE = -5 V; IC = -300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 130 | 190 | - | - | ||
| VCE = -5 V; IC = -600 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 140 | 210 | - | - | ||
| VCEsat | Collector-emitter saturation voltage | IC = -50 mA; IB = -2.5 mA; Tamb = 25 C | - | -35 | -45 | mV |
| IC = -200 mA; IB = -10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | -70 | -100 | mV | ||
| IC = -500 mA; IB = -10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | -200 | -300 | mV | ||
| IC = -600 mA; IB = -6 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | -450 | -750 | mV | ||
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A; Tamb = 25 C | -0.6 | -1 | -1.5 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -20 mA; Tamb = 25 C | -1 | -1.3 | -1.8 | V |
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 11 | - | pF |
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.
[2] See section "Test information" for resistor calculation and test conditions.
Package Outline
SOT23 (TO-236AB)
Dimensions in mm:
Body: 2.9 x 1.3 x 1.0
Pitch: 1.9
Ordering Information
Type Number: PBRP113ET
Package: SOT23
Marking
Marking Code: %7K (where % is a placeholder for manufacturing site code)
2410121850_Nexperia-PBRP113ET-215_C551814.pdf
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