Compact digital transistor onsemi NSVMUN5312DW1T2G designed to replace external resistor bias networks
Key Attributes
Model Number:
NSVMUN5312DW1T2G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
22kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
NSVMUN5312DW1T2G
Package:
SOT-363
Product Description
Product Overview
This series of digital transistors integrates a single transistor with a monolithic bias network, consisting of a base resistor and a base-emitter resistor. Designed to replace external resistor bias networks, these devices simplify circuit design, reduce board space, and decrease component count. They are suitable for applications requiring unique site and control change requirements, with S and NSV prefixes available for AEC-Q101 qualified and PPAP capable variants. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AEC-Q101 Qualified (S and NSV Prefix), PPAP Capable (S and NSV Prefix), RoHS Compliant, Pb-Free, Halogen Free/BFR Free
Technical Specifications
| Device | Package | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | R2 | Junction and Storage Temperature Range |
| DTC124EP/D, MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 | SOT-363, SOT-563, SOT-963 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 10 Vdc | 22 k | 22 k | 55 to +150 C |
2410121848_onsemi-NSVMUN5312DW1T2G_C489571.pdf
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