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quality General purpose PNP resistor equipped transistors Nexperia PDTA123EU 115 for circuit driver and inverter factory
quality General purpose PNP resistor equipped transistors Nexperia PDTA123EU 115 for circuit driver and inverter factory

General purpose PNP resistor equipped transistors Nexperia PDTA123EU 115 for circuit driver and inverter

Key Attributes
Model Number: PDTA123EU,115
Product Custom Attributes
Input Resistor:
2.2kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA123EU,115
Package:
SOT-323
Product Description

Product Overview

The PDTA123E series PNP resistor-equipped transistors are designed for simplified circuit design, offering a reduction in component count and pick-and-place costs. These transistors are suitable for general-purpose switching and amplification, as well as inverter and interface circuits, and circuit driver applications. Featuring built-in bias resistors, they provide an efficient solution for various electronic designs.

Product Attributes

  • Brand: NXP Semiconductors
  • Product Type: PNP resistor-equipped transistors
  • Resistor Values: R1 = 2.2 k, R2 = 2.2 k
  • Origin: Made in Hong Kong, Malaysia, or China (indicated by marking code)

Technical Specifications

Model Package Marking Code NPN Complement Collector-Emitter Voltage (VCEO) Output Current (IO) Bias Resistor (R1) Bias Resistor (R2)
PDTA123EE SOT416 (SC-75) 5C PDTC123EE -50 V -100 mA 2.2 k 2.2 k
PDTA123EEF SOT490 (SC-89) 6C PDTC123EEF -50 V -100 mA 2.2 k 2.2 k
PDTA123EK SOT346 (SC-59) 42 PDTC123EK -50 V -100 mA 2.2 k 2.2 k
PDTA123EM SOT883 (SC-101) F7 PDTC123EM -50 V -100 mA 2.2 k 2.2 k
PDTA123ES SOT54 (TO-92) TA123E PDTC123ES -50 V -100 mA 2.2 k 2.2 k
PDTA123ET SOT23 *21(1) PDTC123ET -50 V -100 mA 2.2 k 2.2 k
PDTA123EU SOT323 (SC-70) *42(1) PDTC123EU -50 V -100 mA 2.2 k 2.2 k
Parameter Conditions Min. Typ. Max. Unit
Collector-Base Voltage (VCBO) Open emitter - - -50 V
Collector-Emitter Voltage (VCEO) Open base - - -50 V
Emitter-Base Voltage (VEBO) Open collector - - -10 V
Input Voltage (VI) Positive - - +10 V
Input Voltage (VI) Negative - - -12 V
Output Current (IO) DC - - -100 mA
Peak Collector Current (ICM) - - - -100 mA
Total Power Dissipation (Ptot) Tamb 25 C (SOT54) - - 500 mW
Total Power Dissipation (Ptot) Tamb 25 C (SOT23) - - 250 mW
Total Power Dissipation (Ptot) Tamb 25 C (SOT346) - - 250 mW
Total Power Dissipation (Ptot) Tamb 25 C (SOT323) - - 200 mW
Total Power Dissipation (Ptot) Tamb 25 C (SOT416) - - 150 mW
Total Power Dissipation (Ptot) Tamb 25 C (SOT490) - - 250 mW
Total Power Dissipation (Ptot) Tamb 25 C (SOT883) - - 250 mW
Storage Temperature (Tstg) - -65 - +150 C
Junction Temperature (Tj) - - - 150 C
Operating Ambient Temperature (Tamb) - -65 - +150 C
Collector-Base Cut-off Current (ICBO) VCB = -50 V; IE = 0 A - - -100 nA
Collector-Emitter Cut-off Current (ICEO) VCE = -30 V; IB = 0 A - - -1 A
Collector-Emitter Cut-off Current (ICEO) VCE = -30 V; IB = 0 A; Tj = 150 C - - -50 A
Emitter-Base Cut-off Current (IEBO) VEB = -5 V; IC = 0 A - - -2 mA
DC Current Gain (hFE) VCE = -5 V; IC = -20 mA 30 - - -
Collector-Emitter Saturation Voltage (VCEsat) IC = -10 mA; IB = -0.5 mA - - -150 mV
Input-Off Voltage (Vi(off)) IC = -1 mA; VCE = -5 V -1.2 - -0.5 V
Input-On Voltage (Vi(on)) IC = -20 mA; VCE = -0.3 V -2 -1.6 - V
Input Resistor (R1) - 1.54 2.2 2.86 k
Resistor Ratio (R2/R1) - 0.8 1 1.2 -
Collector Capacitance (Cc) IE = ie = 0 A; VCB = -10 V; f = 1 MHz - - 3 pF

2410121943_Nexperia-PDTA123EU-115_C552061.pdf

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