Surface Mount PNP Resistor Equipped Transistor Nexperia PDTB123ET 215 Ideal for Controlling IC Inputs
Key Attributes
Model Number:
PDTB123ET,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
2.86kΩ
Resistor Ratio:
1.1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTB123ET,215
Package:
SOT-23
Product Description
Product Overview
The Nexperia PDTB123ET is a 500 mA PNP Resistor-Equipped Transistor (RET) housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. Designed for digital applications in automotive and industrial segments, this transistor simplifies circuit design and reduces component count due to its built-in bias resistors. It offers a cost-saving alternative for BC807 series in digital applications and is suitable for controlling IC inputs and switching loads. The device is AEC-Q101 qualified, ensuring reliability for demanding applications.
Product Attributes
- Brand: Nexperia
- Type: PNP Resistor-Equipped Transistor (RET)
- Package: SOT23 (TO-236AB)
- Qualification: AEC-Q101
- NPN Complement: PDTD123ET
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | -50 | V |
| IO | Output current | - | - | - | -500 | mA |
| R1 | Bias resistor 1 (input) | - | 1.54 | 2.2 | 2.86 | k |
| R2/R1 | Bias resistor ratio | - | 0.9 | 1.0 | 1.1 | - |
| VCBO | Collector-base voltage | open emitter | - | - | -50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | -10 | V |
| VI | Input voltage | positive | - | - | +10 | V |
| VI | Input voltage | negative | - | - | -12 | V |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 250 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | +150 | C |
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [1] | - | - | 500 | K/W |
| ICBO | Collector-base cut-off current | VCB = -40 V; IE = 0 A | - | - | -100 | nA |
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -50 V; IB = 0 A | - | - | -0.5 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -2.0 | mA |
| hFE | DC current gain | VCE = -5 V; IC = -50 mA | 40 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -50 mA; IB = -2.5 mA | - | - | -0.3 | V |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | -0.6 | -1.1 | -1.8 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -20 mA | -1.0 | -1.5 | -2.0 | V |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 100 MHz | - | 11 | - | pF |
2410121742_Nexperia-PDTB123ET-215_C455003.pdf
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