Nexperia PDTC143XT 215 NPN Resistor Equipped Transistor for Control of IC Inputs and Load Switching

Key Attributes
Model Number: PDTC143XT,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
7V
Input Resistor:
4.7kΩ
Resistor Ratio:
2.1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC143XT,215
Package:
SOT-23
Product Description

Nexperia PDTC143X Series NPN Resistor-Equipped Transistors

Product Overview

The Nexperia PDTC143X series comprises NPN Resistor-Equipped Transistors (RETs) in surface-mounted device (SMD) plastic packages. These transistors feature built-in bias resistors, reducing component count and simplifying circuit design. They are designed to lower pick-and-place costs and are AEC-Q101 qualified, making them suitable for digital applications in automotive and industrial segments. This series offers a cost-saving alternative to BC847/857 series in digital applications, enabling efficient control of IC inputs and switching of loads.

Product Attributes

  • Brand: Nexperia
  • Type: NPN Resistor-Equipped Transistor (RET)
  • Technology: Surface-Mounted Device (SMD)
  • Certification: AEC-Q101 qualified
  • Internal Resistors: R1 = 4.7 k, R2 = 10 k

Technical Specifications

Type Number Package PNP Complement R1 Bias Resistor (Input) R2/R1 Bias Resistor Ratio VCEO (V) IO (mA)
PDTC143XE SOT416 (SC-75) PDTA143XE 3.3 - 6.1 k 1.7 - 2.6 50 100
PDTC143XM SOT883 (SC-101) PDTA143XM 3.3 - 6.1 k 1.7 - 2.6 50 100
PDTC143XT SOT23 (TO-236AB) PDTA143XT 3.3 - 6.1 k 1.7 - 2.6 50 100
PDTC143XU SOT323 (SC-70) PDTA143XU 3.3 - 6.1 k 1.7 - 2.6 50 100

Key Features & Benefits

  • 100 mA output current capability
  • Reduces component count
  • Built-in bias resistors
  • Reduces pick and place costs
  • Simplifies circuit design

Applications

  • Digital applications in automotive and industrial segments
  • Cost-saving alternative for BC847/857 series in digital applications
  • Control of IC inputs
  • Switching loads

Ordering Information

Type Number Package Name Description Version
PDTC143XE SOT416 Plastic surface-mounted package; 3 leads SC-75
PDTC143XM SOT883 Leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm SC-101
PDTC143XT SOT23 Plastic surface-mounted package; 3 leads TO-236AB
PDTC143XU SOT323 Plastic surface-mounted package; 3 leads SC-70

Marking Codes

Type Number Marking Code[1]
PDTC143XE 34
PDTC143XM E2
PDTC143XT *32
PDTC143XU *53

[1] * = placeholder for manufacturing site code

Limiting Values

Symbol Parameter Conditions Min Max Unit
VCBO Collector-base voltage open emitter - 50 V
VCEO Collector-emitter voltage open base - 50 V
VEBO Emitter-base voltage open collector - 7 V
VI Input voltage positive - +20 V
VI Input voltage negative - -7 V
IO Output current - - 100 mA
ICM Peak collector current single pulse; tp 1 ms - 100 mA
Ptot Total power dissipation Tamb 25 C; PDTC143XE (SOT416) [1][2] - 150 mW
Ptot Total power dissipation Tamb 25 C; PDTC143XM (SOT883) [2][3] - 250 mW
Ptot Total power dissipation Tamb 25 C; PDTC143XT (SOT23) [1] - 250 mW
Ptot Total power dissipation Tamb 25 C; PDTC143XU (SOT323) [1] - 200 mW
Tj Junction temperature - - 150 C
Tamb Ambient temperature - -65 +150 C
Tstg Storage temperature - -65 +150 C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.

Thermal Characteristics

Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) Thermal resistance from junction to ambient in free air PDTC143XE (SOT416) [1][2] - - 830 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air PDTC143XM (SOT883) [2][3] - - 500 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air PDTC143XT (SOT23) [1] - - 500 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air PDTC143XU (SOT323) [1] - - 625 K/W

Characteristics

Symbol Parameter Conditions Min Typ Max Unit
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 600 A
hFE DC current gain VCE = 5 V; IC = 10 mA 50 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A - 0.3 0.9 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 20 mA 1.5 2.5 - V
R1 Bias resistor 1 (input) - 3.3 4.7 6.1 k
R2/R1 Bias resistor ratio - 1.7 2.1 2.6 -
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz [1] - 230 - MHz

[1] Characteristics of built-in transistor

Quality Information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

Contact Information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com


2410121759_Nexperia-PDTC143XT-215_C183011.pdf
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