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quality Nexperia BC817 40 215 NPN transistor designed for space saving applications in compact SOT23 package factory
quality Nexperia BC817 40 215 NPN transistor designed for space saving applications in compact SOT23 package factory

Nexperia BC817 40 215 NPN transistor designed for space saving applications in compact SOT23 package

Key Attributes
Model Number: BC817-40,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
345mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC817-40,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia BC817 series are NPN general-purpose transistors designed for versatile applications. These transistors are housed in a compact SOT23 (TO-236AB) surface-mounted plastic package, making them suitable for space-constrained designs. They offer high current capabilities and come with three distinct current gain selections, providing flexibility for various design needs. The BC817 series is ideal for general-purpose switching and amplification tasks.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23 (TO-236AB)
  • Transistor Type: NPN

Technical Specifications

Model PNP Complement Max Collector-Emitter Voltage (VCEO) Max Collector Current (IC) Package Marking Code
BC817 BC807 45 V 500 mA SOT23 (TO-236AB) 6D%
BC817-16 BC807-16 45 V 500 mA SOT23 (TO-236AB) 6A%
BC817-25 BC807-25 45 V 500 mA SOT23 (TO-236AB) 6B%
BC817-40 BC807-40 45 V 500 mA SOT23 (TO-236AB) 6C%
Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base; Tamb = 25 C - - 45 V
IC Collector current Tamb = 25 C - - 500 mA
ICM Peak collector current Single pulse; tp 1 ms; Tamb = 25 C - - 1 A
hFE DC current gain (BC817) VCE = 1 V; IC = 100 mA; Tamb = 25 C [1] 100 - 600 -
hFE DC current gain (BC817-16) VCE = 1 V; IC = 100 mA; Tamb = 25 C [1] 100 - 250 -
hFE DC current gain (BC817-25) VCE = 1 V; IC = 100 mA; Tamb = 25 C [1] 160 - 400 -
hFE DC current gain (BC817-40) VCE = 1 V; IC = 100 mA; Tamb = 25 C [1] 250 - 600 -
VCBO Collector-base voltage Open emitter; Tamb = 25 C - - 50 V
VEBO Emitter-base voltage Open collector; Tamb = 25 C - - 5 V
IBM Peak base current Single pulse; tp 1 ms; Tamb = 25 C - - 200 mA
Ptot Total power dissipation Tamb 25 C [1][2] - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient In free air [1][2] - - 500 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 10 mA; IE = 0 A; Tamb = 25 C 45 - - V
V(BR)EBO Emitter-base breakdown voltage IE = 100 A; IC = 0 A; Tamb = 25 C 5 - - V
ICBO Collector-base cut-off current VCB = 20 V; IE = 0 A; Tamb = 25 C - - 100 nA
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
VCEsat Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; Tamb = 25 C [1] - - 700 mV
VBE Base-emitter voltage VCE = 1 V; IC = 500 mA; Tamb = 25 C [1][2] - - 1.2 V
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 C - - 3 pF

[1] Pulsed; tp 300 s; 0.02

[2] VBE decreases by about 2 mV/K with increasing temperature.


2410121938_Nexperia-BC817-40-215_C52801.pdf

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