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quality NPN Transistor Nexperia PBSS4350TVL Featuring Low RCEsat and High Collector Current in SOT23 Package factory
quality NPN Transistor Nexperia PBSS4350TVL Featuring Low RCEsat and High Collector Current in SOT23 Package factory

NPN Transistor Nexperia PBSS4350TVL Featuring Low RCEsat and High Collector Current in SOT23 Package

Key Attributes
Model Number: PBSS4350TVL
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50uA
Pd - Power Dissipation:
540mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS4350TVL
Package:
SOT-23
Product Description

Product Overview

The Nexperia PBSS4350T is an NPN low VCEsat transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It offers a low collector-emitter saturation voltage (VCEsat) and corresponding low RCEsat, high collector current capability, and high collector current gain. These features contribute to improved efficiency through reduced heat generation. The PBSS4350T is suitable for power management applications, low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO).

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23 (TO-236AB)
  • Transistor Type: NPN
  • Complementary PNP Transistor: PBSS5350T

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 50 V
IC Collector current - - - 2 A
ICM Peak collector current Single pulse; tp 1 ms - - 5 A
RCEsat Collector-emitter saturation resistance IC = 2 A; IB = 200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 100 130 m
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 5 V
ICRM Repetitive peak collector current 0.25; tp 100 ms - - 3 A
IB Base current - - - 0.5 A
Ptot Total power dissipation Tamb 25 C - - 1.2 W
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient [1] - 417 - K/W
Rth(j-a) Thermal resistance from junction to ambient [2] - 260 - K/W
Rth(j-a) Thermal resistance from junction to ambient [3] - 230 - K/W
Rth(j-a) Thermal resistance from junction to ambient [4] - 104 - K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 10 mA; IB = 0 A; pulsed; tp 300 s; 0.02; Tamb = 25 C 50 - - V
V(BR)EBO Emitter-base breakdown voltage (collector open) IE = 100 A; IC = 0 A; Tamb = 25 C 5 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tj = 150 C - - 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
VCEsat Collector-emitter saturation voltage VCE = 2 V; IC = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 300 - mV
VCEsat Collector-emitter saturation voltage VCE = 2 V; IC = 500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 300 - mV
VCEsat Collector-emitter saturation voltage VCE = 2 V; IC = 1 A; pulsed; tp 300 s; 0.02; Tamb = 25 C - 300 - mV
VCEsat Collector-emitter saturation voltage VCE = 2 V; IC = 2 A; pulsed; tp 300 s; 0.02; Tamb = 25 C - 200 - mV
hFE DC current gain VCE = 2 V; IC = 3 A; pulsed; tp 300 s; 0.02; Tamb = 25 C 100 - - -
VCEsat Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; Tamb = 25 C - - 80 mV
VCEsat Collector-emitter saturation voltage IC = 1 A; IB = 50 mA; Tamb = 25 C - - 160 mV
VCEsat Collector-emitter saturation voltage IC = 2 A; IB = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 280 mV
VCEsat Collector-emitter saturation voltage IC = 2 A; IB = 200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 260 mV
VCEsat Collector-emitter saturation voltage IC = 3 A; IB = 300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 370 mV
RCEsat Collector-emitter saturation resistance IC = 2 A; IB = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 1.1 V
VBEsat Base-emitter saturation voltage IC = 3 A; IB = 300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 1.2 V
VBEon Base-emitter turn-on voltage VCE = 2 V; IC = 1 A; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 1.2 V
fT Transition frequency VCE = 5 V; IC = 100 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 25 pF

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm.
[4] Operated under pulsed conditions: tp 100 ms; 0.25.


2410121939_Nexperia-PBSS4350TVL_C551933.pdf

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