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quality Surface Mount PNP PNP Resistor Equipped Transistors Featuring Nexperia PUMB15 115 for Circuit Design factory
quality Surface Mount PNP PNP Resistor Equipped Transistors Featuring Nexperia PUMB15 115 for Circuit Design factory

Surface Mount PNP PNP Resistor Equipped Transistors Featuring Nexperia PUMB15 115 for Circuit Design

Key Attributes
Model Number: PUMB15,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMB15,115
Package:
SOT-363
Product Description

Product Overview

The PEMB15 and PUMB15 are PNP/PNP double Resistor-Equipped Transistors (RET) designed for surface-mounted applications. These devices integrate built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. They are AEC-Q101 qualified, making them suitable for demanding applications such as low current peripheral driving, control of IC inputs, and as replacements for general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Product Type: PNP/PNP Resistor-Equipped Transistors (RET)
  • Certifications: AEC-Q101 qualified

Technical Specifications

Model Package NPN/PNP Complement Package Configuration R1 Bias Resistor (Typical) R2/R1 Bias Resistor Ratio (Typical) Output Current (Max) Collector-Emitter Voltage (Open Base)
PEMB15 SOT666 (ultra small and flat lead) PEMD15 PNP/PNP 4.7 k 1 -100 mA -50 V
PUMB15 SOT363 (SC-88, very small) PUMD15 PNP/PNP 4.7 k 1 -100 mA -50 V
Parameter Conditions Min Typ Max Unit
Per Transistor Characteristics
Collector-Emitter Voltage (VCEO) Open base - - -50 V
Output Current (IO) - - - -100 mA
R1 Bias Resistor (input) 3.3 4.7 6.1 k
R2/R1 Bias Resistor Ratio - 0.8 1 1.2 -
Collector-Base Voltage (VCBO) Open emitter - - -50 V
Emitter-Base Voltage (VEBO) Open collector - - -10 V
Input Voltage (VI) Positive - - +10 V
Input Voltage (VI) Negative - - -30 V
Peak Collector Current (ICM) Single pulse; tp 1 ms - - -100 mA
Junction Temperature (Tj) - - - 150 C
Ambient Temperature (Tamb) - -65 - +150 C
Storage Temperature (Tstg) - -65 - +150 C
Total Power Dissipation (Ptot)
Per transistor (Tamb 25 C) PEMB15 (SOT666) - - 200 mW
Per transistor (Tamb 25 C) PUMB15 (SOT363) - - 200 mW
Per device (Tamb 25 C) PEMB15 (SOT666) - - 300 mW
Per device (Tamb 25 C) PUMB15 (SOT363) - - 300 mW
Thermal Characteristics
Thermal resistance (Rth(j-a)) Per transistor, free air, PEMB15 (SOT666) - - 625 K/W
Thermal resistance (Rth(j-a)) Per transistor, free air, PUMB15 (SOT363) - - 625 K/W
Thermal resistance (Rth(j-a)) Per device, free air, PEMB15 (SOT666) - - 417 K/W
Thermal resistance (Rth(j-a)) Per device, free air, PUMB15 (SOT363) - - 417 K/W
Characteristics (Tamb = 25 C unless otherwise specified)
Collector-Base Cut-off Current (ICBO) VCB = -50 V; IE = 0 A - - -100 nA
Collector-Emitter Cut-off Current (ICEO) VCE = -30 V; IB = 0 A - - -1 A
Collector-Emitter Cut-off Current (ICEO) VCE = -30 V; IB = 0 A; Tj = 150 C - - -5 A
Emitter-Base Cut-off Current (IEBO) VEB = -5 V; IC = 0 A - - -900 A
DC Current Gain (hFE) VCE = -5 V; IC = -10 mA 30 - - -
Collector-Emitter Saturation Voltage (VCEsat) IC = -10 mA; IB = -0.5 mA - - -150 mV
Off-State Input Voltage (VI(off)) VCE = -5 V; IC = -100 A - -1.1 -0.5 V
On-State Input Voltage (VI(on)) VCE = -0.3 V; IC = -20 mA -2.5 -1.9 - V
Collector Capacitance (Cc) VCB = -10 V; IE = ie = 0 A; f = 1 MHz - - 3 pF
Transition Frequency (fT) VCE = -5 V; IC = -10 mA; f = 100 MHz - 180 - MHz

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Replaces general-purpose transistors in digital applications

2410121745_Nexperia-PUMB15-115_C553491.pdf

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