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quality Nexperia PUMD10-QX Double Resistor Equipped Transistor NPN PNP Type for Automotive Peripheral Driving factory
quality Nexperia PUMD10-QX Double Resistor Equipped Transistor NPN PNP Type for Automotive Peripheral Driving factory

Nexperia PUMD10-QX Double Resistor Equipped Transistor NPN PNP Type for Automotive Peripheral Driving

Key Attributes
Model Number: PUMD10-QX
Product Custom Attributes
Resistor Ratio:
21
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD10-QX
Package:
SC-74
Product Description

Nexperia PUMD10-Q NPN/PNP Double Resistor-Equipped Transistor

Product Overview
The Nexperia PUMD10-Q is an NPN/PNP double Resistor-Equipped Transistor (RET) designed for low current peripheral driving and control of IC inputs. Featuring built-in bias resistors, this device simplifies circuit design, reduces component count, and lowers pick-and-place costs. It is qualified according to AEC-Q101 and recommended for automotive applications, making it suitable for digital applications where it can replace general-purpose transistors.

Product Attributes

  • Brand: Nexperia
  • Type: NPN/PNP double Resistor-Equipped Transistor (RET)
  • Package: SOT363 (SC-88)
  • Certifications: Qualified according to AEC-Q101
  • Recommended Use: Automotive applications

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
General
R1 bias resistor 1.54 2.2 2.86 k
R2/R1 bias resistor ratio 17 21 26
Per transistor; for the PNP transistor (TR2) with negative polarity, where applicable
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - 100 mA
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 180 A
hFE DC current gain VCE = 5 V; IC = 10 mA 100 - -
VCEsat Collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A - 0.6 0.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 5 mA 1.1 0.75 - V
TR1 (NPN)
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz [2] - 230 - MHz
TR2 (PNP)
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 3 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz [2] - 180 - MHz
Limiting values
VCBO Collector-base voltage Open emitter - - 50 V
VCEO Collector-emitter voltage Open base - - 50 V
VEBO Emitter-base voltage Open collector - - 5 V
VI Input voltage Positive (input voltage TR1) - - 12 V
VI Input voltage Negative (input voltage TR1) - -5 - V
VI Input voltage Positive (input voltage TR2) - - 5 V
VI Input voltage Negative (input voltage TR2) - -12 - V
IO Output current - - 100 mA
Ptot Total power dissipation Tamb 25 C [1] - - 200 mW
Ptot Total power dissipation Tamb 25 C [1] (Per device) - - 300 mW
Tj Junction temperature - - 150 C
Tamb Ambient temperature -65 - 150 C
Tstg Storage temperature -65 - 150 C
Thermal characteristics
Rth(j-a) Thermal resistance junction to ambient In free air [1] (Per transistor) - - 625 K/W
Rth(j-a) Thermal resistance junction to ambient In free air [1] (Per device) - - 417 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Characteristics of built-in transistor


2411121145_Nexperia-PUMD10-QX_C7509017.pdf
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