Silicon carbide cascode fet onsemi UJ4C075023K4S designed for ev charging and pv inverter applications
Key Attributes
Model Number:
UJ4C075023K4S
Product Custom Attributes
Mfr. Part #:
UJ4C075023K4S
Package:
TO-247-4
Product Description
Product Overview
The UJ4C075023K4S is a 750 V, 23 m SiC FET designed for high-performance power applications. It utilizes a unique cascode configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off device with standard gate drive characteristics. This makes it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO-247-4L package, it offers ultra-low gate charge and excellent reverse recovery, making it ideal for switching inductive loads and applications requiring standard gate drive. Key applications include EV Charging, PV Inverters, Switch Mode Power Supplies, Power Factor Correction Modules, Motor Drives, and Induction Heating.
Product Attributes
- Brand: onsemi
- Material: Silicon Carbide (SiC)
- Certifications: Pb-Free, Halogen Free, RoHS Compliant
- Package: TO-247-4L
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Maximum Ratings | ||||
| Drain-source Voltage | VDS | 750 | V | |
| Gate-source Voltage | VGS | DC | -20 to +20 | V |
| Gate-source Voltage | VGS | AC (f > 1 Hz) | -25 to +25 | V |
| Continuous Drain Current | ID | TC = 25 C | 66 | A |
| Continuous Drain Current | ID | TC = 100 C | 49 | A |
| Pulsed Drain Current | IDM | TC = 25 C | 196 | A |
| Single Pulsed Avalanche Energy | EAS | L = 15 mH, IAS = 3 A | 67 | mJ |
| SiC FET dv/dt Ruggedness | dv/dt | VDS 500 V | 150 | V/ns |
| Power Dissipation | Ptot | TC = 25 C | 306 | W |
| Maximum Junction Temperature | TJ, max | 175 | C | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | C | |
| Max. Lead Temperature for Soldering, 1/8 from Case for 5 seconds | TL | 250 | C | |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-to-Case | RJC | 0.38 (typ), 0.49 (max) | C/W | |
| Electrical Characteristics (TJ = +25 C unless otherwise specified) | ||||
| Typical Performance - Static | ||||
| Drain-source Breakdown Voltage | BVDS | VGS = 0 V, ID = 1 mA | 750 | V |
| Total Drain Leakage Current | IDSS | VDS = 750 V, VGS = 0 V, TJ = 25 C | 2 (typ), 30 (max) | A |
| Total Drain Leakage Current | IDSS | VDS = 750 V, VGS = 0 V, TJ = 175C | 15 (typ) | A |
| Total Gate Leakage Current | IGSS | VDS = 0 V, TJ = 25 C | -6 (VGS=-20V), 20 (VGS=+20V) | nA |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 40 A, TJ = 25C | 23 (typ), 29 (max) | m |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 40 A, TJ = 125C | 39 (typ) | m |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 40 A, TJ = 175C | 50 (typ) | m |
| Gate Threshold Voltage | VG(th) | VDS = 5 V, ID = 10 mA | 4.8 (typ) | V |
| Gate Resistance | RG | f = 1 MHz, open drain | 4.5 (typ) | |
| Typical Performance - Reverse Diode | ||||
| Diode Continuous Forward Current | IS | TC = 25 C | 66 | A |
| Diode Pulse Current | IS, pulse | TC = 25 C | 196 | A |
| Forward Voltage | VFSD | VGS = 0 V, IS = 20 A, TJ = 25 C | 1.23 (typ), 1.39 (max) | V |
| Forward Voltage | VFSD | VGS = 0 V, IS = 20 A, TJ = 175 C | 1.45 (typ) | V |
| Reverse Recovery Charge | Qrr | VDS = 400 V, IS = 40 A, VGS = 0 V, RG_EXT = 5 , di/dt = 3100 A/s, TJ = 25 C | 105 (typ) | nC |
| Reverse Recovery Time | trr | VDS = 400 V, IS = 40 A, VGS = 0 V, RG_EXT = 5 , di/dt = 3100 A/s, TJ = 25 C | 12 (typ) | ns |
| Reverse Recovery Charge | Qrr | VDS = 400 V, IS = 40 A, VGS = 0 V, RG_EXT = 5 , di/dt = 3100 A/s, TJ = 150 C | 112 (typ) | nC |
| Reverse Recovery Time | trr | VDS = 400 V, IS = 40 A, VGS = 0 V, RG_EXT = 5 , di/dt = 3100 A/s, TJ = 150 C | 13 (typ) | ns |
| Typical Performance - Dynamic | ||||
| Input Capacitance | Ciss | VDS = 400 V, VGS = 0 V, f = 100 kHz | 1400 (typ) | pF |
| Output Capacitance | Coss | VDS = 400 V, VGS = 0 V, f = 100 kHz | 93 (typ) | pF |
| Reverse Transfer Capacitance | Crss | VDS = 400 V, VGS = 0 V, f = 100 kHz | 2.5 (typ) | pF |
| Effective Output Capacitance, Energy Related | Coss(er) | VDS = 0 V to 400 V, VGS = 0 V | 116 (typ) | pF |
| Effective Output Capacitance, Time Related | Coss(tr) | VDS = 0 V to 400 V, VGS = 0 V | 232 (typ) | pF |
| Stored Energy in Coss | Eoss | VDS = 400 V, VGS = 0 V | 9.3 (typ) | J |
| Total Gate Charge | QG | VDS = 400 V, ID = 40 A, VGS = 0 V to 15 V | 37.8 (typ) | nC |
| Gate-drain Charge | QGD | VDS = 400 V, ID = 40 A, VGS = 0 V to 15 V | 8 (typ) | nC |
| Gate-source Charge | QGS | VDS = 400 V, ID = 40 A, VGS = 0 V to 15 V | 11.8 (typ) | nC |
| Turn-on Delay Time | td(on) | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | 16 (typ) | ns |
| Rise Time | tr | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | 27 (typ) | ns |
| Turn-off Delay Time | td(off) | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | 28 (typ) | ns |
| Fall Time | tf | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | 8 (typ) | ns |
| Turn-on Energy Including RS Energy | EON | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | 237 (typ) | J |
| Turn-off Energy Including RS Energy | EOFF | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | 50 (typ) | J |
| Total Switching Energy | ETOTAL | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C | 287 (typ) | J |
| Turn-on Delay Time | td(on) | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | 19 (typ) | ns |
| Rise Time | tr | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | 24 (typ) | ns |
| Turn-off Delay Time | td(off) | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | 29 (typ) | ns |
| Fall Time | tf | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | 10 (typ) | ns |
| Turn-on Energy Including RS Energy | EON | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | 288 (typ) | J |
| Turn-off Energy Including RS Energy | EOFF | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | 60 (typ) | J |
| Total Switching Energy | ETOTAL | VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C | 348 (typ) | J |
2509091403_onsemi-UJ4C075023K4S_C45343213.pdf
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