Nexperia PUMB9 115 PNP Double Resistor Equipped Transistors Ideal for Low Current Peripheral Driving
Key Attributes
Model Number:
PUMB9,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
10kΩ
Resistor Ratio:
4.7
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMB9,115
Package:
SOT-363
Product Description
Nexperia PEMB9; PUMB9 PNP/PNP Resistor-Equipped Transistors
Product Overview
The Nexperia PEMB9 and PUMB9 are PNP/PNP double Resistor-Equipped Transistors (RETs) designed for surface-mounted applications. These devices integrate built-in bias resistors, significantly reducing component count, pick-and-place costs, and simplifying circuit design. They are AEC-Q101 qualified, making them suitable for automotive, industrial, computing, consumer, and wearable applications. Key applications include low current peripheral driving and control of IC inputs, where they can replace general-purpose transistors in digital circuits.
Product Attributes
- Brand: Nexperia
- Product Type: PNP/PNP double Resistor-Equipped Transistors (RETs)
- Certifications: AEC-Q101 qualified
- Resistor Values: R1 = 10 k, R2 = 47 k
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | open base | - | - | -50 | V |
| IO | Output current | - | - | - | -100 | mA |
| R1 | Bias resistor 1 (input) | - | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | - | 3.7 | 4.7 | 5.7 | - |
| VCBO | Collector-base voltage | open emitter | - | - | -50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | -6 | V |
| VI | Input voltage | positive | - | - | +6 | V |
| VI | Input voltage | negative | - | - | -40 | V |
| ICM | Peak collector current | single pulse; tp 1 ms | - | - | -100 | mA |
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A | - | - | -1 | A |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A; Tj = 150 C | - | - | -5 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -150 | A |
| hFE | DC current gain | VCE = -5 V; IC = -5 mA | 100 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -5 mA; IB = -0.25 mA | - | - | -100 | mV |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | - | -0.7 | -0.5 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -1 mA | -1.4 | -0.8 | - | V |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz | - | 180 | - | MHz |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C (PEMB9 SOT666) | - | - | 200 | mW |
| Ptot | Total power dissipation | Tamb 25 C (PUMB9 SOT363) | - | - | 200 | mW |
| Ptot | Total power dissipation | Tamb 25 C (PEMB9 SOT666) | - | - | 300 | mW |
| Ptot | Total power dissipation | Tamb 25 C (PUMB9 SOT363) | - | - | 300 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | +150 | C |
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| Thermal characteristics (Per device) | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient | in free air (PEMB9 SOT666) | - | - | 417 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air (PUMB9 SOT363) | - | - | 417 | K/W |
Models and Packages
| Type Number | Package Name | Description | Package Configuration |
|---|---|---|---|
| PEMB9 | SOT666 | Ultra small and flat lead plastic surface-mounted package; 6 leads | - |
| PUMB9 | SC-88 | Very small plastic surface-mounted package; 6 leads | - |
Ordering Information
| Type Number | Package Name | Description | Version |
|---|---|---|---|
| PEMB9 | SOT666 | Plastic surface-mounted package; 6 leads | - |
| PUMB9 | SOT363 | Plastic surface-mounted package; 6 leads | - |
Marking Codes
| Type Number | Marking Code |
|---|---|
| PEMB9 | Z6 |
| PUMB9 | B*9 |
2411121133_Nexperia-PUMB9-115_C553502.pdf
Related Products
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
