NPN PNP Double Transistor RET Nexperia PUMD48 115 with 100mA Output Current in Compact SOT363 Package
Key Attributes
Model Number:
PUMD48,115
Product Custom Attributes
Input Resistor:
47kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD48,115
Package:
TSSOP-6(SOT-363)
Product Description
Product Overview
The Nexperia PUMD48 is a highly integrated NPN/PNP double Resistor-Equipped Transistor (RET) designed for space-constrained applications. It features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. This device is ideal for low-current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications. With a 100 mA output current capability and a 50 V collector-emitter voltage rating, it offers robust performance in a compact SOT363 (SC-88) SMD package.
Product Attributes
- Brand: Nexperia
- Package Type: SOT363 (SC-88)
- Technology: Resistor-Equipped Transistor (RET)
- Configuration: NPN/PNP Double Transistor
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Per Transistor (PNP with negative polarity) | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| Transistor TR1 (NPN) | ||||||
| R1 | Bias resistor 1 (input) | [1] | 33 | 47 | 61 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | - |
| Transistor TR2 (PNP) | ||||||
| R1 | Bias resistor 1 (input) | [1] | 1.54 | 2.2 | 2.86 | k |
| R2/R1 | Bias resistor ratio | [1] | 17 | 21 | 26 | - |
| Limiting Values (Per transistor) | ||||||
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector (TR1 NPN) | - | - | 10 | V |
| VEBO | Emitter-base voltage | Open collector (TR2 PNP) | - | - | -5 | V |
| VI | Input voltage | Positive (input TR1) | - | - | 40 | V |
| VI | Input voltage | Negative (input TR1) | - | - | -10 | V |
| VI | Input voltage | Positive (input TR2) | - | - | 5 | V |
| VI | Input voltage | Negative (input TR2) | - | - | -12 | V |
| IO | Output current | - | - | - | 100 | mA |
| Limiting Values (Per device) | ||||||
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 300 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Thermal Characteristics (Per device) | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient | In free air [1] | - | - | 417 | K/W |
| Characteristics (Tamb = 25 C, unless otherwise specified) | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 1 | A |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| Transistor TR1 (NPN) Characteristics | ||||||
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 90 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA | 80 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 100 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | - | 1.2 | 0.8 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 2 mA | 3 | 1.6 | - | V |
| R1 | Bias resistor 1 (input) | [1] | 33 | 47 | 61 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | - |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz [2] | - | 230 | - | MHz |
| Transistor TR2 (PNP) Characteristics | ||||||
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -180 | A |
| hFE | DC current gain | VCE = -5 V; IC = -10 mA | 100 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -5 mA; IB = -0.25 mA | - | - | -100 | mV |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | - | -0.6 | -0.5 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -5 mA | -1.1 | -0.75 | - | V |
| R1 | Bias resistor 1 (input) | [1] | 1.54 | 2.2 | 2.86 | k |
| R2/R1 | Bias resistor ratio | [1] | 17 | 21 | 26 | - |
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz [2] | - | 180 | - | MHz |
[1] See section "Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor.
Package Outline: TSSOP6 (SOT363)
Marking Code: 4%8 (where % is a placeholder for manufacturing site code)
2410010131_Nexperia-PUMD48-115_C455004.pdf
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