N Channel Enhancement Mode Field Effect Transistor NIKO-SEM PM606BA Featuring SOT23 Package Halogen Free
Key Attributes
Model Number:
PM606BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
45pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
329pF@15V
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
7.8nC@10V
Mfr. Part #:
PM606BA
Package:
SOT-23
Product Description
N-Channel Enhancement Mode Field Effect Transistor PM606BA
The PM606BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It features a SOT-23(S) package and is Halogen-Free & Lead-Free.
Product Attributes
- Brand: NIKO-SEM
- Package: SOT-23(S)
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Units |
|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | TA = 25 C Unless Otherwise Noted | 30 | V |
| Gate-Source Voltage | VGS | TA = 25 C Unless Otherwise Noted | ±20 | V |
| Continuous Drain Current | ID | TA = 25 C | 5 | A |
| Continuous Drain Current | ID | TA = 70 C | 3.7 | A |
| Pulsed Drain Current | IDM | 1Pulse width limited by maximum junction temperature. | 15 | A |
| Power Dissipation | PD | TA = 25 C | 0.8 | W |
| Power Dissipation | PD | TA = 70 C | 0.5 | W |
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Ambient | RθJA | 2The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. | 146 | °C / W |
| Junction-to-Case | RθJC | 60 | °C / W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 30 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.3 TYP 1.75 MAX 2.3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V, TJ = 55 °C | 10 | µA |
| Drain-Source On-State Resistance | RDS(ON) | VGS =4.5V, ID = 5A | 23 TYP 31 MAX | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 5A | 17 TYP 20 MAX | mΩ |
| Forward Transconductance | gfs | VDS = 5V, ID = 5A | 26 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 329 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = 15V, f = 1MHz | 70 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 15V, f = 1MHz | 45 | pF |
| Total Gate Charge | Qg | VDS = 15V , VGS = 10V, ID = 5A | 7.8 | nC |
| Gate-Source Charge | Qgs | VDS = 15V , VGS = 10V, ID = 5A | 1.2 | nC |
| Gate-Drain Charge | Qgd | VDS = 15V , VGS = 10V, ID = 5A | 2.3 | nC |
| Turn-On Delay Time | td(on) | VDS = 15V , ID & 5A, VGS = 10V, RGEN =6Ω | 17 | nS |
| Rise Time | tr | VDS = 15V , ID & 5A, VGS = 10V, RGEN =6Ω | 17 | nS |
| Turn-Off Delay Time | td(off) | VDS = 15V , ID & 5A, VGS = 10V, RGEN =6Ω | 37 | nS |
| Fall Time | tf | VDS = 15V , ID & 5A, VGS = 10V, RGEN =6Ω | 18 | nS |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | TJ = 25 °C | 0.7 | A |
| Forward Voltage | VSD | IF = 5A, VGS = 0V | 1.1 | V |
| Reverse Recovery Time | trr | IF = 5A, dlF/dt = 100A / µS | 10 | nS |
| Reverse Recovery Charge | Qrr | IF = 5A, dlF/dt = 100A / µS | 2.6 | nC |
2411220253_NIKO-SEM-PM606BA_C532985.pdf
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