Pb Free Halogen Free RoHS Compliant NIKO SEM PK650DY Dual N Channel Transistor for Power Management
Key Attributes
Model Number:
PK650DY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
83A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.75V
Reverse Transfer Capacitance (Crss@Vds):
388pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
3.685nF@15V
Pd - Power Dissipation:
36W
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
PK650DY
Package:
DFN-8-EP(6x5)
Product Description
Product Overview
The NIKO-SEM H-21-2 is a Dual N-Channel Enhancement Mode Field Effect Transistor in a PK650DY PDFN 5x6P package. It offers low RDS(on) for minimized conduction losses and an optimized gate charge for reduced switching losses. This transistor is Pb-free, halogen-free, and RoHS compliant, making it suitable for protection circuits, logic/load switch circuits, and DC-to-DC converters.
Product Attributes
- Brand: NIKO-SEM
- Model: H-21-2
- Package: PK650DY PDFN 5x6P
- Certifications: PbFree, Halogen Free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Q2 | Q1 | Units |
| Drain-Source Voltage | VDS | 30 | 30 | V |
| Gate-Source Voltage | VGS | 20 | 20 | V |
| Continuous Drain Current (TC = 25 C) | ID | 83 | 36 | A |
| Continuous Drain Current (TC = 100 C) | ID | 52 | 23 | A |
| Pulsed Drain Current | IDM | 130 | 55 | A |
| Continuous Drain Current (TA = 25 C) | ID | 21 | 10 | A |
| Continuous Drain Current (TA = 70 C) | ID | 17 | 8 | A |
| Avalanche Current | IAS | 52 | 21 | A |
| Avalanche Energy (L = 0.1mH) | EAS | 135 | 22 | mJ |
| Power Dissipation (TC = 25 C) | PD | 36 | 28 | W |
| Power Dissipation (TC = 100 C) | PD | 14 | 11 | W |
| Power Dissipation (TA = 25 C) | PD | 2.4 | 2 | W |
| Power Dissipation (TA = 70 C) | PD | 1.5 | 1.3 | W |
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | C | |
| Junction-to-Ambient Thermal Resistance (Typical) | RJA | 51 | 60 | C / W |
| Junction-to-Case Thermal Resistance (Typical) | RJC | 3.4 | 4.4 | C / W |
| Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) | V(BR)DSS | 30 | 30 | V |
| Gate Threshold Voltage (VDS = VGS, ID = 250A) | VGS(th) | 1.3 - 2.3 | 1.3 - 2.3 | V |
| Gate-Body Leakage (VDS = 0V, VGS = 20V) | IGSS | 100 | 100 | nA |
| Zero Gate Voltage Drain Current (VDS = 24V, VGS = 0V) | IDSS | 1 | 1 | A |
| Drain-Source On-State Resistance (VGS = 4.5V, ID = 16A) | RDS(ON) | 2.1 - 3.8 | - | m |
| Drain-Source On-State Resistance (VGS = 4.5V, ID = 10A) | RDS(ON) | - | 10 - 14 | m |
| Drain-Source On-State Resistance (VGS = 10V, ID = 20A) | RDS(ON) | 1.6 - 2.8 | - | m |
| Drain-Source On-State Resistance (VGS = 10V, ID = 10A) | RDS(ON) | - | 6.8 - 11 | m |
| Forward Transconductance (VDS = 5V, ID = 20A) | gfs | 55 | - | S |
| Forward Transconductance (VDS = 5V, ID = 10A) | gfs | - | 40 | S |
| Input Capacitance | Ciss | 3685 | 531 | pF |
| Output Capacitance | Coss | 615 | 147 | pF |
| Reverse Transfer Capacitance | Crss | 388 | 67 | pF |
| Gate Resistance | Rg | 1 | 1 | |
| Total Gate Charge (VGS = 10V, VDS = 15V, ID = 20A for Q2 / ID = 10A for Q1) | Qg | 72 | 10 | nC |
| Total Gate Charge (VGS = 4.5V, VDS = 15V, ID = 20A for Q2 / ID = 10A for Q1) | Qg | 37 | 5.6 | nC |
| Gate-Source Charge (VGS = 10V, VDS = 15V, ID = 20A for Q2 / ID = 10A for Q1) | Qgs | 10 | 1.4 | nC |
| Gate-Drain Charge (VGS = 10V, VDS = 15V, ID = 20A for Q2 / ID = 10A for Q1) | Qgd | 18 | 3 | nC |
| Turn-On Delay Time (VDS = 15V, ID 20A for Q2 / ID 10A for Q1, VGS = 10V, RGEN =6) | td(on) | 32 | 15 | nS |
| Rise Time (VDS = 15V, ID 20A for Q2 / ID 10A for Q1, VGS = 10V, RGEN =6) | tr | 16 | 13 | nS |
| Turn-Off Delay Time (VDS = 15V, ID 20A for Q2 / ID 10A for Q1, VGS = 10V, RGEN =6) | td(off) | 72 | 21 | nS |
| Fall Time (VDS = 15V, ID 20A for Q2 / ID 10A for Q1, VGS = 10V, RGEN =6) | tf | 10 | 15 | nS |
| Continuous Source Current | IS | 36 | 23 | A |
| Forward Voltage (IF = 20A, VGS = 0V) | VSD | 1 | - | V |
| Forward Voltage (IF = 10A, VGS = 0V) | VSD | - | 1.2 | V |
| Reverse Recovery Time (IF = 20A, dlF/dt = 100A / S for Q2 / IF = 10A, dlF/dt = 100A / S for Q1) | trr | 28 | 8.8 | nS |
| Reverse Recovery Charge (IF = 20A, dlF/dt = 100A / S for Q2 / IF = 10A, dlF/dt = 100A / S for Q1) | Qrr | 13 | 1.2 | nC |
2411220221_NIKO-SEM-PK650DY_C532980.pdf
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