252 Package Halogen Free Lead Free P Channel Enhancement Mode Field Effect Transistor NIKO SEM PD537BA
Key Attributes
Model Number:
PD537BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
71A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
271pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
2.464nF@15V
Pd - Power Dissipation:
73W
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
PD537BA
Package:
TO-252-2
Product Description
Product Overview
The PD537BA is a P-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers Halogen-Free & Lead-Free compliance and is housed in a TO-252 package.
Product Attributes
- Brand: NIKO-SEM
- Package: TO-252
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limits | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | ±25 | V | |
| Continuous Drain Current | ID | TC = 25 °C | -71 | A |
| Continuous Drain Current | ID | TC = 100 °C | -45 | A |
| Pulsed Drain Current | IDM | -160 | A | |
| Avalanche Current | IAS | -36 | A | |
| Avalanche Energy | EAS | L = 0.1mH | 64.8 | mJ |
| Power Dissipation | PD | TC = 25 °C | 73 | W |
| Power Dissipation | PD | TC = 100 °C | 29 | W |
| Junction & Storage Temperature Range | TJ, Tstg | -55 to 150 | °C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Case | RθJC | 1.7 | °C / W | |
| Junction-to-Ambient | RθJA | 62.5 | °C / W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -30 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -1 to -1.6 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±25V | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS = 0V | -1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS = -20V, VGS = 0V, TJ = 125 °C | -10 | µA |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -10V, ID = -20A | 6.5 to 8 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5V, ID = -20A | 9.6 to 14 | mΩ |
| Forward Transconductance | gfs | VDS = -5V, ID = -20A | 49 | S |
| Input Capacitance | Ciss | VGS = 0V, VDS = -15V, f = 1MHz | 2464 | pF |
| Output Capacitance | Coss | VGS = 0V, VDS = -15V, f = 1MHz | 374 | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = -15V, f = 1MHz | 271 | pF |
| Gate Resistance | Rg | VGS =0V, VDS = 0V, f = 1MHz | 3.8 | Ω |
| Total Gate Charge | Qg | VDS = -15V , ID = -20A, VGS=-10V | 55 | nC |
| Total Gate Charge | Qg | VDS = -15V , ID = -20A, VGS=-4.5V | 27 | nC |
| Gate-Source Charge | Qgs | VDS = -15V , ID = -20A, VGS=-10V | 8.3 | nC |
| Gate-Drain Charge | Qg | VDS = -15V , ID = -20A, VGS=-10V | 11 | nC |
| Turn-On Delay Time | td(on) | VDS = -15V , ID ≈ -20A, VGS = -10V, RGEN =6Ω | 15 | nS |
| Rise Time | tr | VDS = -15V , ID ≈ -20A, VGS = -10V, RGEN =6Ω | 20 | nS |
| Turn-Off Delay Time | td(off) | VDS = -15V , ID ≈ -20A, VGS = -10V, RGEN =6Ω | 41 | nS |
| Fall Time | tf | VDS = -15V , ID ≈ -20A, VGS = -10V, RGEN =6Ω | 23 | nS |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | -56 | A | |
| Forward Voltage | VSD | IF = -20A, VGS = 0V | -1.3 | V |
| Reverse Recovery Time | trr | IF = -20A, dlF/dt = 100A / μS | 26 | nS |
| Reverse Recovery Charge | Qrr | IF = -20A, dlF/dt = 100A / μS | 13 | nC |
2411192312_NIKO-SEM-PD537BA_C444868.pdf
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