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quality PANJIT BC847BS R1 00001 General Purpose NPN Dual Transistor with SOT 363 Package and Lead Free Materials factory
quality PANJIT BC847BS R1 00001 General Purpose NPN Dual Transistor with SOT 363 Package and Lead Free Materials factory

PANJIT BC847BS R1 00001 General Purpose NPN Dual Transistor with SOT 363 Package and Lead Free Materials

Key Attributes
Model Number: BC847BS_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC847BS_R1_00001
Package:
SOT-363
Product Description

BC847BS NPN General Purpose Dual Transistor

The BC847BS is an NPN epitaxial silicon planar design general purpose dual transistor designed for amplifier applications. It is lead-free and compliant with EU RoHS 2011/65/EU directive, utilizing a green molding compound as per IEC61249 Std. (Halogen Free). The transistor is housed in a SOT-363 plastic package with solderable terminals per MIL-STD-750, Method 2026.

Product Attributes

  • Brand: Panjit International Inc. (implied by disclaimer)
  • Material: NPN epitaxial silicon, planar design
  • Color: Green molding compound (Halogen Free)
  • Certifications: EU RoHS 2011/65/EU directive compliant

Technical Specifications

Parameter Symbol Value Units Test Condition Min. Typ. Max.
POWER ABSOLUTE MAXIMUM RATINGS
Collector - Emitter Voltage VCEO 45 V
Collector - Base Voltage VCBO 50 V
Emitter - Base Voltage VEBO 6 V
Collector Current - Continuous IC 100 mA
Total Device Dissipation Per Device (FR-5 Board) PD 150 mW TA=25OC
Derate above 25OC 3 mW/OC
Thermal Resistance, Junction to Ambient RJA 550 OC/W (Note 2)
Junction Temperature TJ -55 to 150 OC
Storage Temperature TSTG -55 to 150 OC
ELECTRICAL CHARACTERISTICS
Collector - Emitter Breakdown Voltage V(BR)CEO 45 V IC=10mA
Collector - Emitter Breakdown Voltage V(BR)CES 50 V IC=10A, VEB=0
Collector - Base Breakdown Voltage V(BR)CBO 50 V IC=10A
Emitter - Base Breakdown Voltage V(BR)EBO 6 V IE=1A
Collector Cutoff Current ICBO nA VCB=30V 15
A VCB=30V, TA=150 OC 5
DC Current Gain hFE 200 - 450 - IC=2mA, VCE=5V
Collector - Emitter Saturation Voltage VCE(SAT) V IC=10mA, IB=0.5mA 0.25
V IC=100mA, IB=5mA 0.6
Base - Emitter Saturation Voltage VBE(SAT) V IC=10mA, IB=0.5mA 0.6 0.8
V IC=100mA, IB=5mA 0.9 1
Base - Emitter Voltage VBE(ON) mV IC=2mA, VCE=5V 580 660
mV IC=10mA, VCE=5V 700 770
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product fT 100 MHZ IC=10mA,VCE=5Vdc,f=100MHZ
Output Capacitance Cobo pF VCB=10V,f=1MHZ 4.5
Noise Figure NF dB IC=0.2mA,VCE=5Vdc, RS=2k ,f=1.0kHZ , BW=200H Z 10

2504101957_PANJIT-BC847BS-R1-00001_C17681415.pdf

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