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quality Digital transistor onsemi MUN5233T1G with monolithic base resistor network enabling compact and electronic designs factory
quality Digital transistor onsemi MUN5233T1G with monolithic base resistor network enabling compact and electronic designs factory

Digital transistor onsemi MUN5233T1G with monolithic base resistor network enabling compact and electronic designs

Key Attributes
Model Number: MUN5233T1G
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
4.7kΩ
Resistor Ratio:
0.1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MUN5233T1G
Package:
SC-70(SOT-323)
Product Description

Product Overview

This series of digital transistors (BRT) integrates a single transistor with a monolithic bias resistor network, comprising a series base resistor and a base-emitter resistor. This integration eliminates the need for external components, simplifying circuit design, reducing board space, and lowering component count. The devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. S and NSV prefixes are available for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (onsemi)
  • Certifications: AEC-Q101 Qualified (S and NSV Prefix)
  • Compliance: PbFree, Halogen Free/BFR Free, RoHS Compliant

Technical Specifications

Part NumberPackageCollectorBase Voltage (VCBO)CollectorEmitter Voltage (VCEO)Collector Current (IC)Input Forward Voltage (VIN(fwd))Input Reverse Voltage (VIN(rev))R1R2
MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3SC-59, SOT-23, SC-70/SOT-323, SC-75, SOT-723, SOT-112350 Vdc50 Vdc100 mAdc30 Vdc5 Vdc4.7 k47 k
PackageTotal Device Dissipation (PD) @ 25CThermal Resistance (RJA)Junction and Storage Temperature Range (TJ, Tstg)
SC-59230 mW (Min Pad) / 338 mW (1.0x1.0 Pad)540 C/W (Min Pad) / 370 C/W (1.0x1.0 Pad)55 to +150 C
SOT-23246 mW (Min Pad) / 400 mW (1.0x1.0 Pad)508 C/W (Min Pad) / 311 C/W (1.0x1.0 Pad)55 to +150 C
SC-70/SOT-323202 mW (Min Pad) / 310 mW (1.0x1.0 Pad)618 C/W (Min Pad) / 403 C/W (1.0x1.0 Pad)55 to +150 C
SC-75200 mW (Min Pad) / 300 mW (1.0x1.0 Pad)600 C/W (Min Pad) / 400 C/W (1.0x1.0 Pad)55 to +150 C
SOT-723260 mW (Min Pad) / 600 mW (100 mm2 Pad)480 C/W (Min Pad) / 205 C/W (100 mm2 Pad)55 to +150 C
SOT-1123254 mW (100 mm2 Pad) / 297 mW (500 mm2 Pad)493 C/W (100 mm2 Pad) / 421 C/W (500 mm2 Pad)55 to +150 C
CharacteristicSymbolMinTypMaxUnit
CollectorBase Cutoff CurrentICBO100nAdc
CollectorEmitter Cutoff CurrentICEO500nAdc
EmitterBase Cutoff CurrentIEBO0.18mAdc
CollectorBase Breakdown VoltageV(BR)CBO50Vdc
CollectorEmitter Breakdown VoltageV(BR)CEO50Vdc
DC Current GainhFE80200
CollectorEmitter Saturation VoltageVCE(sat)0.25Vdc
Input Voltage (off)Vi(off)0.60.5Vdc
Input Voltage (on)Vi(on)1.30.9Vdc
Output Voltage (on)VOL0.2Vdc
Output Voltage (off)VOH4.9Vdc
Input ResistorR13.34.76.1k
Resistor RatioR1/R20.080.10.12

2410010303_onsemi-MUN5233T1G_C177206.pdf

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