General Purpose NPN Transistor PANJIT BC817-40 R1 00001 with 45 Volt Collector Emitter Voltage Rating
Key Attributes
Model Number:
BC817-40_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
330mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC817-40_R1_00001
Package:
SOT-323
Product Description
BC817 Series NPN General Purpose Transistors
The BC817 series are NPN epitaxial silicon planar design general purpose transistors suitable for amplifier applications. They are lead-free in compliance with EU RoHS 2011/65/EU directive and feature a green molding compound as per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Not explicitly stated, but associated with Panjit International Inc.
- Origin: Not explicitly stated
- Material: Silicon, Planar Design
- Color: Green (molding compound)
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
Technical Specifications
| Parameter | Symbol | BC817-16 | BC817-25 | BC817-40 | Unit | |
| MAXIMUM RATINGS | ||||||
| Collector-Emitter Voltage | VCEO | 45 | 45 | 45 | V | |
| Collector-Base Voltage | VCBO | 50 | 50 | 50 | V | |
| Emitter-Base Voltage | VEBO | 5 | 5 | 5 | V | |
| Collector Current - Continuous | IC | 500 | 500 | 500 | mA | |
| Peak Collector Current | ICM | 1000 | 1000 | 1000 | mA | |
| Total Power Dissipation (NOTE) | PTOT | 330 | 330 | 330 | mW | |
| Junction and Storage Temperature Range | TJ , TSTG | -55 to +150 | °C | |||
| ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) | ||||||
| Collector-Emitter Breakdown Voltage (Ic=10mA, IB=0) | V(BR)CEO | 45 | 45 | 45 | V | |
| Collector-Base Breakdown Voltage (VEB=0V, Ic=10μA) | V(BR)CBO | 50 | 50 | 50 | V | |
| Emitter-Base Breakdown Voltage (IE=1μA, Ic=0) | V(BR)EBO | 5 | 5 | 5 | V | |
| Emitter-Base Cutoff Current (VEB =5V) | IEBO | < 100 | nA | |||
| Collector-Base Cutoff Current (VCB=20V, IE=0) TJ =25°C | ICBO | < 5 | nA | |||
| Collector-Base Cutoff Current (VCB=20V, IE=0) TJ =150°C | ICBO | < 100 | μA | |||
| DC Current Gain (Ic=100mA, VCE=1V) | hFE | 100-250 | 160-400 | 250-600 | - | |
| DC Current Gain (Ic=500mA, VCE=1V) | hFE | - | - | - | - | |
| Collector-Emitter Saturation Voltage (Ic=500mA, IB=50mA) | VCE(SAT) | < 0.7 | V | |||
| Base-Emitter Voltage (Ic=500mA, VCE=1V) | VBE(ON) | < 1.2 | V | |||
| Collector-Base Capacitance (VCB=10V, IE=0, f=1MHz) | CCBO | 7 | pF | |||
| Current Gain-Bandwidth Product (Ic=10mA, VCE=5V, f=100MHz) | fT | 100 | 100 | 100 | MHz | |
2410121847_PANJIT-BC817-40-R1-00001_C391420.pdf
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