Low RDS ON N-channel 30V Enhancement Mode Power MOSFET NH NTS074N03P3H Ideal for PD Charger SMPS and Motor Driver Circuits
Key Attributes
Model Number:
NTS074N03P3H
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.2mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
2.1V
Reverse Transfer Capacitance (Crss@Vds):
120pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
12W
Input Capacitance(Ciss):
1nF@15V
Gate Charge(Qg):
-
Mfr. Part #:
NTS074N03P3H
Package:
PDFN3x3-8
Product Description
NTS074N03P3H N-channel 30V Enhancement Mode Power MOSFET
Product Overview
The NTS074N03P3H is an N-channel, 30V enhancement mode Power MOSFET from Niu Hang, designed with advanced trench MOSFET technology. It offers low RDS(ON) and ultra-low gate charge, making it suitable for high power and current handling applications. This RoHS compliant component is 100% UIS and RG tested and is ideal for PD Charger V-BUS, SMPS 2nd Synchronous Rectifier, MB/VGA Vcore, BLDC Motor Driver, and POL applications.
Product Attributes
- Brand: Niu Hang (NH)
- Product Line Code: FF (subject to change)
- Data Code: YWW (subject to change)
- Internal Code: LLWWF (subject to change)
- Compliance: RoHS Compliant
- Testing: 100% UIS and RG Tested
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit | ||
|---|---|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V | ||
| Drain-Source On Resistance | RDS(ON) | VGS=10V, ID=8A | - | 6.2 | 7.4 | m | ||
| Total Gate Charge | Qg,Typ. | VDS=25V,ID=8A,VGS=10V | - | 30 | - | nC | ||
| Continuous Drain Current | ID | Note 1 | - | - | 30 | A | ||
| Pulsed Drain Current | IDM | Note 1 | - | - | 50 | A | ||
| Maximum Power Dissipation | PD | Ta=25 | - | - | 32 | W | ||
| Power Dissipation Derating Factor | DF | above 25 | - | - | 0.24 | W/ | ||
| Junction Temperature | TJ | - | -55 | - | 150 | |||
| Avalanche Current,Single pulse | IAS | L=0.1mH | - | 21 | - | A | ||
| Single Pulse Avalanche Energy | EAS | L=0.1mH,IAS=21A, VDD=15V, RG=25, Starting TJ =25 | - | 110 | - | mJ | ||
| Thermal Resistance Junction to Ambient | RJA | Ta=25 | - | - | 50 | /W | ||
| Thermal Resistance Junction-Case | RJC | Note 2 | - | 4.2 | - | /W | ||
| Absolute Maximum Ratings | ||||||||
| Storage temperature range | TSTD | - | -55 | - | 150 | |||
| Drain-Source Voltage | BVDSS | VGS=0V,ID=250uA | 30 | - | - | V | ||
| Gate-Source Voltage | VGS | - | -20 | - | 20 | V | ||
| Continuous Drain Current | ID | Ta=25, Note 1 | - | - | 30 | A | ||
| Continuous Drain Current | ID | Ta=100, Note 1 | - | - | 12 | A | ||
| Drain Current-Pulsed | IDM | Note 1 | - | - | 50 | A | ||
| Maximum Power Dissipation | PD | Ta=25 | - | - | 32 | W | ||
| Power Dissipation Derating Factor | DF | above 25 | - | - | 0.24 | W/ | ||
| Avalanche Current,Single pulse | IAS | L=0.1mH | - | 21 | - | A | ||
| Single Pulse Avalanche Energy | EAS | L=0.1mH,IAS=21A, VDD=15V, RG=25, Starting TJ =25 | - | 110 | - | mJ | ||
| Thermal Resistance Junction to Ambient | RJA | Ta=25 | - | - | 50 | /W | ||
| Thermal Resistance Junction-Case | RJC | Note 2 | - | 4.2 | - | /W | ||
| Electrical Characteristics | ||||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 30 | - | - | V | ||
| Drain-Source Leakage Current | IDSS | VDS=24V,VGS=0V | - | - | 1 | uA | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS,ID=250uA | 1.1 | 1.6 | 2.1 | V | ||
| Drain-Source On Resistance | RDS(ON) | VGS=10V,ID=8A | - | 6.2 | 7.4 | m | ||
| Forward Transconductance | gFS | VDS=5V,ID=8A | - | 12 | - | S | ||
| Input Capacitance | Ciss | VDS=20V,ID=20A, VGS=0V,f=1.0MHz | - | 1000 | - | pF | ||
| Output Capacitance | Coss | VDS=20V,ID=20A, VGS=0V,f=1.0MHz | - | 150 | - | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=20V,ID=20A, VGS=0V,f=1.0MHz | - | 120 | - | pF | ||
| Total Gate Charge | Qg | VDS=25V,ID=8A,VGS=10V | - | 30 | - | nC | ||
| Gate-Source Charge | Qgs | VDS=25V,ID=8A,VGS=10V | - | 6.2 | - | nC | ||
| Gate-Drain Charge | Qgd | VDS=25V,ID=8A,VGS=10V | - | 9.0 | - | nC | ||
| Turn-On Delay Time | td(on) | VDS=20V,ID=8A,VGS=10V,RG=1.6 | - | 6 | - | ns | ||
| Turn-On Rise Time | tr | VDS=20V,ID=8A,VGS=10V,RG=1.6 | - | 22 | - | ns | ||
| Turn-Off Delay Time | td(off) | VDS=20V,ID=8A,VGS=10V,RG=1.6 | - | 48 | - | ns | ||
| Turn-Off Rise Time | tf | VDS=20V,ID=8A,VGS=10V,RG=1.6 | - | 20 | - | ns | ||
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1.0MHz | - | 3.50 | - | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||||
| Max. Diode Forward Current | ISD | VGS=0V,IS=10A | - | - | 50 | A | ||
| Max. Pulsed Forward Current | ISM | - | - | - | 150 | A | ||
| Diode Forward Voltage | VSD | IF=8A,di/dt=100A/us | - | 0.70 | 1.1 | V | ||
| Reverse Recovery Time | trr | IF=8A,di/dt=100A/us | - | 14 | - | ns | ||
| Reverse Recovery Charge | Qrr | IF=8A,di/dt=100A/us | - | 6 | - | C | ||
| OUTLINE DIMENSIONS | ||||||||
| Dim. | Millimeters | Inches | Min. | Typ. | Max. | Min. | Typ. | Max. |
| a | 0.750 | 0.780 | 0.810 | 0.030 | 0.031 | 0.032 | ||
| b | 0.297 | 0.300 | 0.350 | 0.012 | 0.012 | 0.014 | ||
| c | - | 0.152 | - | - | 0.006 | - | ||
| D | 0.000 | 0.050 | 0.100 | 0.000 | 0.002 | 0.004 | ||
| D1 | 3.120 | 3.150 | 3.180 | 0.123 | 0.124 | 0.125 | ||
| D2 | - | 2.350 | - | - | 0.093 | - | ||
| E | 3.200 | 3.300 | 3.400 | 0.126 | 0.130 | 0.134 | ||
| E1 | 3.090 | 3.120 | 3.150 | 0.122 | 0.123 | 0.124 | ||
| E2 | - | 1.750 | - | - | 0.069 | - | ||
| E3 | - | 0.575 | - | - | 0.023 | - | ||
| E4 | - | 0.400 | - | - | 0.016 | - | ||
| R | - | 0.150 | - | - | 0.006 | - | ||
| e | - | 0.650 | - | - | 0.026 | - | ||
| a1 | - | 12 | - | - | 12 | - | ||
| PACKING INFORMATION | ||||||||
| Package Method | Reel Size (mm) | Quantity (pcs/reel) | Inner Box Size LWH(mm) | Quantity (pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (pcs/carton) | ||
| Tape Reel | 330 | 5000 | 34034050 | 10000 | 360360260 | 50000 | ||
2410121853_NH-NTS074N03P3H_C7427707.pdf
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