Low RDS ON N Channel MOSFET NH NSH110N15D Designed for Synchronous Rectification and UPS Applications
Key Attributes
Model Number:
NSH110N15D
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
81A
RDS(on):
11mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5.5pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
1.882nF@75V
Pd - Power Dissipation:
179W
Gate Charge(Qg):
26nC
Mfr. Part #:
NSH110N15D
Package:
TO-263
Product Description
Product Overview
The NSH110N15D is an N-Channel Enhanced Shielded Gate Trench Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching. With high EAS for reliability, this MOSFET is 100% UIS and RG tested. It is ideal for applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive electronics, and UPS (Uninterruptible Power Supplies).
Product Attributes
- Brand: Niuhang (NH)
- Model ID: NSH110N15D
- Product Line Code: FF
- Date Code: YWW
- Internal Code: LLWWF
- Certifications: RoHS Compliant, Pb-Free
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Continuous Drain Current | Ta= 25 | ID | 81 | A | ||
| RDS(ON) Type | @10V | RDS(ON) | 8.00 | m | ||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 81 | A | ||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 52 | A | ||
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | 324 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 179 | W | ||
| Maximum Power Dissipation | Ta= 100 | PD | 71 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | 1.43 | W/ | ||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | |||
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | 22 | A | ||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 75 V | EAS | 125 | mJ | ||
| Single Pulse Avalanche Energy (Note 1) | IAS= 22.4 A,RG= 10 Starting Tj=25 ,VG = 10 V | EAS | 125 | mJ | ||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 60.0 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 0.7 | /W | ||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Static off Characteristics | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 150 | V | ||
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | 0.172 | V/ | ||
| Drain-Source Leakage Current | VDS= 150 V,VGS=0V | I DSS | 1 | uA | ||
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | I GSS | 100 | nA | ||
| Forward Transconductance | ID= 20 A,VDS= 5 V | gfs | 48 | S | ||
| Static on Characteristics | ||||||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 20 A,VGS= 10 V | R DS(ON) | 8.00 | 13.00 | m | |
| Drain-Source On Resistance | ID= 20 A,VGS= 4.5 V | R DS(ON) | 9.20 | 17.42 | m | |
| Dynamic Characteristics | ||||||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | 4.40 | |||
| Input Capacitance | VDS= 75 V | C iss | 1882.0 | pF | ||
| Output Capacitance | VGS= 0 V | C oss | 235.0 | pF | ||
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | 5.5 | pF | ||
| Switching Parameters (Test Circuit & Waveform See Fig.14) | ||||||
| Turn-On Delay Time | VDS= 75 V | t d(on) | 10.0 | ns | ||
| Turn-On Rise Time | VGS= 10 V | t r | 6.0 | ns | ||
| Turn-Off Delay Time | RL= 1.2 | t d(off) | 19.0 | ns | ||
| Turn-Off Rise Time | RG= 10 | t f | 7.3 | ns | ||
| Gate Charge Parameters (Test Circuit & Waveform See Fig.15) | ||||||
| Total Gate Charge | VDS= 75 V | Q g | 26.0 | nC | ||
| Gate-Source Charge | VGS= 10 V | Q gs | 11.0 | nC | ||
| Gate-Drain Charge | ID= 20 A | Q gd | 3.7 | nC | ||
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | ||||||
| Max. Diode Forward Current | I S | 81 | A | |||
| Max. Pulsed Forward Current | I SM | 284 | A | |||
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | 0.90 | 1.26 | V | |
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | t rr | 72.0 | ns | ||
| Reverse Recovery Charge | VGS= 10 V,VDS= 75 V | Q rr | 120.0 | nC | ||
| Package Information | ||||||
| Package Type | TO-263 | |||||
| Weight | App. 2.057 Grams | (0.07255 Ounce) | ||||
| Packing Information | ||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | |
| TO-263 | T/R | 35534040 | 800 | 370x360x420 | 8000 | |
2504101957_NH-NSH110N15D_C46352555.pdf
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