AECQ101 qualified onsemi BAV70TT1G dual switching diodes for automotive and general purpose switching applications
Key Attributes
Model Number:
BAV70TT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
500mA
Reverse Leakage Current (Ir):
1uA@100V
Reverse Recovery Time (trr):
6ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAV70TT1G
Package:
SC-75
Product Description
Product Overview
The BAV70T and NSVBAV70T are dual switching diodes designed for automotive and other applications requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable, offering Pb-free, halogen-free/BFR-free, and RoHS compliant solutions. They are suitable for general-purpose switching applications.
Product Attributes
- Brand: onsemi (Semiconductor Components Industries, LLC)
- Certifications: AEC-Q101 Qualified, PPAP Capable, RoHS Compliant
- Material: Pb-Free, Halogen Free/BFR Free
- Package: SOT-416/SC-75
Technical Specifications
| Characteristic | Symbol | Min | Max | Unit | Notes |
| MAXIMUM RATINGS | |||||
| Reverse Voltage | VR | 100 | Vdc | ||
| Forward Current | IF | 200 | mAdc | ||
| Peak Forward Surge Current | IFM(surge) | 500 | mAdc | ||
| Total Device Dissipation, FR-4 Board (Note 1) TA = 25C | PD | 225 | mW | Derated above 25C: 1.8 mW/C | |
| Thermal Resistance, Junction to Ambient (Note 1) | RJA | 555 | C/W | FR-4 @ Minimum Pad | |
| Total Device Dissipation, FR-4 Board (Note 2) TA = 25C | PD | 360 | mW | Derated above 25C: 2.9 mW/C | |
| Thermal Resistance, Junction-to-Ambient (Note 2) | RJA | 345 | C/W | FR-4 @ 1.0 x 1.0 Inch Pad | |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | +150 | C | |
| ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) | |||||
| Reverse Breakdown Voltage (I(BR) = 100 Adc) | V(BR) | 100 | Vdc | ||
| Reverse Voltage Leakage Current (Note 3) (VR = 100 Vdc) | IR | 1.0 | nAdc | ||
| Reverse Voltage Leakage Current (Note 3) (VR = 50 Vdc) | IR | 100 | Adc | ||
| Diode Capacitance (VR = 0, f = 1.0 MHz) | CD | 1.5 | pF | ||
| Forward Voltage (IF = 1.0 mAdc) | VF | 715 | mVdc | ||
| Forward Voltage (IF = 10 mAdc) | VF | 855 | mVdc | ||
| Forward Voltage (IF = 50 mAdc) | VF | 1000 | mVdc | ||
| Forward Voltage (IF = 150 mAdc) | VF | 1250 | mVdc | ||
| Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1) | trr | 6.0 | ns | ||
| Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) (Figure 2) | VRF | 1.75 | V | ||
2410010333_onsemi-BAV70TT1G_C232586.pdf
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