500V N Channel Power MOSFET NH NPS13N50F Featuring Low RDS ON and Ultra Low Gate Charge for Power Supply
Key Attributes
Model Number:
NPS13N50F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13A
RDS(on):
385mΩ@10V,6.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
10pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.96nF@25V
Pd - Power Dissipation:
42W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
NPS13N50F
Package:
TO-220F
Product Description
Product Overview
The Niu Hang NPS13N50F is a 500V N-Channel Enhancement Mode Power MOSFET designed for high-efficiency power applications. It features low RDS(ON) and ultra-low gate charge, making it suitable for adapters, PCs, PDs, chargers, LED drivers, and switched-mode power supplies (SMPS), including uninterruptible power supplies (UPS). This RoHS compliant component is 100% UIS and RG tested, ensuring reliability and performance in demanding environments.
Product Attributes
- Brand: Niu Hang (NH)
- Model: NPS13N50F
- Compliance: RoHS Compliant
- Testing: 100% UIS and RG Tested
- Product Line Code: FF (subject to change)
- Data Code: YWW (subject to change)
- Internal Code: LLWWF (subject to change)
Technical Specifications
| NPS13N50F 500V N-Channel Enhancement Mode Power MOSFET | ||
| Parameter | Symbol | Rating |
| Absolute Maximum Ratings | ||
| Drain-Source Voltage | VDS | 500 V |
| Gate-Source Voltage | VGS | 30 V |
| Continuous Drain Current (Note 1) | ID | 13 A |
| Drain Current-Pulsed (Note 1) | IDM | 52 A |
| Maximum Power Dissipation (Ta=25) | PD | 845 W |
| Junction Temperature | TJ | -55 to 150 |
| Storage temperature range | -55 to 150 | |
| Avalanche Current,Single pulse (L=10mH) | IAS | 13 A |
| Single Pulse Avalanche Energy (TJ<150) | EAS | 8.3 mJ |
| Thermal Characteristics | ||
| Thermal Resistance Junction to Ambient (Note 2) | RJA | 62.5 /W |
| Thermal Resistance Junction-Case (Note 2) | RJC | 3.0 /W |
| Electrical Characteristics | ||
| Drain-Source Breakdown Voltage | BV DSS | 500 V |
| Drain-Source Leakage Current (VGS=0V,Ta = 25) | IDSS | 250 uA |
| Gate-Body Leakage Current (VGS= 30) | IGSS | 100 nA |
| Gate Threshold Voltage | VGS(TH) | 3.0 - 4.0 V |
| Drain-Source On Resistance | RDS(ON) | 0.385 (Typ. @10V) |
| Input Capacitance | Ciss | 1960 pF (Typ.) |
| Output Capacitance | Coss | 550 pF (Typ.) |
| Reverse Transfer Capacitance | Crss | 20 pF (Typ.) |
| Switching Parameters | ||
| Turn-On Delay Time | td(on) | 9 ns (Typ.) |
| Turn-On Rise Time | tr | 10 ns (Typ.) |
| Turn-Off Delay Time | td(off) | 30 ns (Typ.) |
| Turn-Off Rise Time | tf | 13 ns (Typ.) |
| Total Gate Charge | Qg | 42 nC (Typ.) |
| Gate-Source Charge | Qgs | 9 nC (Typ.) |
| Gate-Drain Charge | Qgd | 13 nC (Typ.) |
| Drain-Source Diode Characteristics | ||
| Diode Forward Voltage | VSD | 1.5 V (Max. @ 13A) |
| Reverse Recovery Time | trr | 52 ns (Typ.) |
| Reverse Recovery Charge | Qrr | 0.9 C (Typ.) |
Notes:
- 1. Still air environment with TA =25 C.
- 2. Device mounted on 1 in FR-4 board with 2oz copper.
2410121819_NH-NPS13N50F_C7427696.pdf
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