Power MOSFET NH NSS060N04P3 Featuring Low Gate Charge and PDFN3x3 Package for High Frequency Circuit
Key Attributes
Model Number:
NSS060N04P3
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
62A
RDS(on):
8.04mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Output Capacitance(Coss):
365pF
Input Capacitance(Ciss):
930pF@20V
Pd - Power Dissipation:
30W
Gate Charge(Qg):
22nC@20V
Mfr. Part #:
NSS060N04P3
Package:
PDFN3x3-8
Product Description
Product Overview
The NSS060N04P3 is an N-Channel Enhancement Mode Trench Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency, low gate charge for high-speed switching, and high EAS for reliability. This MOSFET is 100% UIS and RG tested and is suitable for applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive electronics, and UPS. It is packaged in a PDFN3*3.
Product Attributes
- Brand: Niuhang (NH)
- Origin: Guangdong, China
- Product Line Code: FF
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Model | NSS060N04P3 | |||||
| Voltage | VDS | 40 | Volts | |||
| Current | ID | 62 | Ampers | |||
| Package | PDFN3*3 | |||||
| Weight | 0.0198 | Grams (0.0007 Ounce) | ||||
| Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | BV DSS | 40 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA, Reference 25 | BV DSS/T J | -- | 0.046 | -- | V/ |
| Drain-Source Leakage Current | VDS= 40 V, VGS=0V | I DSS | -- | -- | 1 | uA |
| Gate-Body Leakage Current | VGS= 20 V, VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 20 A, VDS= 5 V | gfs | -- | 12 | -- | S |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 1.0 | 1.6 | 2.2 | V |
| Drain-Source On Resistance | ID= 20 A, VGS= 10 V | R DS(ON) | -- | 4.40 | 6.00 | m |
| Drain-Source On Resistance | ID= 20 A, VGS= 4.5 V | R DS(ON) | -- | 5.06 | 8.04 | m |
| Gate Resistance | VGS=0V, VDS=0V, Freq.=1MHz | R g | -- | 2.30 | -- | |
| Input Capacitance | VDS= 20 V | C iss | -- | 930.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 365.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 60.0 | -- | pF |
| Turn-On Delay Time | VDS= 20 V | t d(on) | -- | 9.0 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 6.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 27.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 41.0 | -- | ns |
| Total Gate Charge | VDS= 20 V | Q g | -- | 22.0 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 3.3 | -- | nC |
| Gate-Drain Charge | ID= 20 A | Q gd | -- | 6.0 | -- | nC |
| Max. Diode Forward Current | I S | -- | -- | 62 | A | |
| Max. Pulsed Forward Current | I SM | -- | -- | 217 | A | |
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | -- | 0.80 | 1.1 | V |
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | t rr | -- | 30 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 20 V | Q rr | -- | 15.0 | -- | uC |
| Continuous Drain Current | Ta= 25 | ID | 62 | A | ||
| Continuous Drain Current | Ta= 100 | ID | 40 | A | ||
| Drain Current-Pulsed | TJ< 150 | IDM | 248 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 30 | W | ||
| Power Dissipation Derating Factor Above 25 | Ta= 100 | DF | 0.24 | W/ | ||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | |||
| Avalanche Current, Single Pulse | L= 0.5 mH | IAS | 16 | A | ||
| Single Pulse Avalanche Energy | L= 0.5 mH, VDD= 20 V | EAS | 64 | mJ | ||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 60.0 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 4.2 | /W |
2411011351_NH-NSS060N04P3_C41784111.pdf
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