NIKO-SEM PK600BA N Channel Enhancement Mode FET Designed for Switching and Halogen Free Applications
Key Attributes
Model Number:
PK600BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.5mΩ@10V,9.5A
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
104pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
729pF@15V
Pd - Power Dissipation:
27.8W
Gate Charge(Qg):
-
Mfr. Part #:
PK600BA
Package:
DFN-8-EP(6.1x5.2)
Product Description
Product Overview
The PK600BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers high performance with key features like low on-resistance and efficient switching characteristics. This transistor is Halogen-Free & Lead-Free, making it suitable for environmentally conscious designs.
Product Attributes
- Brand: NIKO-SEM
- Model: PK600BA
- Package: PDFN 5x6P
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units | |
| ABSOLUTE MAXIMUM RATINGS | |||||||
| Drain-Source Voltage | VDS | 30 | V | ||||
| Gate-Source Voltage | VGS | ±20 | V | ||||
| Continuous Drain Current | ID | TC = 25 °C | 40 | A | |||
| Continuous Drain Current | ID | TC = 100 °C | 25 | A | |||
| Pulsed Drain Current | IDM | 100 | A | ||||
| Continuous Drain Current | ID | TA = 25 °C | 10.7 | A | |||
| Continuous Drain Current | ID | TA = 70 °C | 8.6 | A | |||
| Avalanche Current | IAS | 18 | A | ||||
| Avalanche Energy | EAS | L = 0.1mH | 16.2 | mJ | |||
| Power Dissipation | PD | TC = 25 °C | 27.8 | W | |||
| Power Dissipation | PD | TC = 100 °C | 11 | W | |||
| Power Dissipation | PD | TA = 25 °C | 2 | W | |||
| Power Dissipation | PD | TA = 70 °C | 1.3 | W | |||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | |||
| THERMAL RESISTANCE RATINGS | |||||||
| Junction-to-Ambient | RθJA | 63 | ° C / W | ||||
| Junction-to-Case | RθJC | 4.5 | ° C / W | ||||
| ELECTRICAL CHARACTERISTICS | |||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 30 | V | |||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.3 | 1.75 | 2.3 | V | |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | µA | |||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V, TJ = 55 °C | 10 | µA | |||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID =9A | 9.7 | 13.5 | mΩ | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 9.5A | 7.4 | 9.5 | mΩ | ||
| Forward Transconductance | gfs | VDS = 5V, ID = 9.5A | 62 | S | |||
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 486 | 608 | 729 | pF | |
| Output Capacitance | Coss | 89 | 112 | 134 | pF | ||
| Reverse Transfer Capacitance | Crss | 44 | 74 | 104 | pF | ||
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 1.4 | 2.8 | 42 | Ω | |
| Total Gate Charge | Qg | VDS = 15V , VGS = 10V, ID = 9.5A | 11 | 14 | 17 | nC | |
| Gate-Source Charge | Qgs | VGS = 4.5V | 1.6 | 2 | 2.4 | nC | |
| Gate-Drain Charge | Qgd | 2.2 | 3.7 | 5.2 | nC | ||
| Turn-On Delay Time | td(on) | VDS = 15V , ID ≈ 9.5A, VGS = 10V, RGEN =6Ω | 13 | nS | |||
| Rise Time | tr | 37 | nS | ||||
| Turn-Off Delay Time | td(off) | 48 | nS | ||||
| Fall Time | tf | 25 | nS | ||||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | |||||||
| Continuous Current | IS | 25 | A | ||||
| Forward Voltage | VSD | IF = 9.5A, VGS = 0V | 1.1 | V | |||
| Reverse Recovery Time | trr | IF = 9.5A, dlF/dt = 100A / μS | 5.9 | 11.7 | 18 | nS | |
| Reverse Recovery Charge | Qrr | 1.5 | 3 | 4.5 | nC | ||
2411220217_NIKO-SEM-PK600BA_C532977.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
