Thermal Management onsemi FGH75T65UPD 650 Volt 75 Amp IGBT with High Junction Temperature Capability
Key Attributes
Model Number:
FGH75T65UPD
Product Custom Attributes
Td(off):
166ns
Pd - Power Dissipation:
375W
Td(on):
32ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
100pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@75mA
Gate Charge(Qg):
385nC
Operating Temperature:
-55℃~+175℃@(Tj)
Reverse Recovery Time(trr):
85ns
Switching Energy(Eoff):
1.2mJ
Turn-On Energy (Eon):
2.85mJ
Input Capacitance(Cies):
5.665nF
Pulsed Current- Forward(Ifm):
225A
Output Capacitance(Coes):
205pF
Mfr. Part #:
FGH75T65UPD
Package:
TO-247
Product Description
Product Overview
Utilizing advanced Field Stop Trench IGBT Technology, ON Semiconductor's FGH75T65UPD-F085 is a 650 V, 75 A IGBT designed for high-performance applications. It offers optimal performance in automotive chargers, solar inverters, UPS, and digital power generators by minimizing conduction and switching losses. Key advantages include a high maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, low saturation voltage, and high input impedance. This device is AEC-Q101 qualified and PPAP capable, making it suitable for demanding automotive and industrial power systems.
Product Attributes
- Brand: ON Semiconductor
- Technology: Field Stop Trench IGBT
- Compliance: PbFree, RoHS Compliant
- Certifications: AECQ101 Qualified, PPAP Capable
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Collector to Emitter Voltage | VCES | 650 | V | |||
| Gate to Emitter Voltage | VGES | ±20 | V | |||
| Collector Current | IC | TC = 25°C | 150 | A | ||
| Collector Current | IC | TC = 100°C | 75 | A | ||
| Pulsed Collector Current | ICM | (Note 1) | 225 | A | ||
| Diode Forward Current | IF | TC = 25°C | 75 | A | ||
| Diode Forward Current | IF | TC = 100°C | 50 | A | ||
| Pulsed Diode Maximum Forward Current | IFM | (Note 1) | 225 | A | ||
| Maximum Power Dissipation | PD | TC = 25°C | 375 | W | ||
| Maximum Power Dissipation | PD | TC = 100°C | 187 | W | ||
| Short Circuit Withstand Time | SCWT | TC = 25°C | 5 | µs | ||
| Operating Junction Temperature | TJ | -55 | +175 | °C | ||
| Storage Temperature Range | Tstg | -55 | +175 | °C | ||
| Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds | TL | 300 | °C | |||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, JunctiontoCase (IGBT) | RJC (IGBT) | (Note 2) | 0.4 | °C/W | ||
| Thermal Resistance, JunctiontoCase (Diode) | RJC (Diode) | 0.86 | °C/W | |||
| Thermal Resistance, JunctiontoAmbient (PCB Mount) | RJA | (Note 2) | 40 | °C/W | ||
| ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) | ||||||
| Collector to Emitter Breakdown Voltage | BVCES | VGE = 0 V, IC = 1 mA | 650 | V | ||
| Temperature Coefficient of Breakdown Voltage | ∂BVCES/ ∂TJ | VGE = 0 V, IC = 1 mA | -0.65 | V/°C | ||
| Collector CutOff Current | ICES | VCES, VGE = 0 V | 250 | µA | ||
| Collector CutOff Current | ICES | 80% * BVCES, 175°C | 3600 | µA | ||
| GE Leakage Current | IGES | VGE = VGES, VCE = 0 V | ±400 | nA | ||
| GE Threshold Voltage | VGE(th) | IC = 75 mA, VCE = VGE | 4.0 | 6.0 | 7.5 | V |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 75 A, VGE = 15 V | 1.69 | 2.3 | V | |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC = 75 A, VGE = 15 V, TC = 175°C | 2.21 | V | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | Cies | VCE = 30 V, VGE = 0 V, f = 1 MHz | 5665 | pF | ||
| Output Capacitance | Coes | 205 | pF | |||
| Reverse Transfer Capacitance | Cres | 100 | pF | |||
| SWITCHING CHARACTERISTICS (TC = 25°C) | ||||||
| TurnOn Delay Time | td(on) | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 32 | 48 | ns | |
| Rise Time | tr | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 43 | 71 | ns | |
| TurnOff Delay Time | td(off) | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 166 | 216 | ns | |
| Fall Time | tf | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 24 | 33 | ns | |
| TurnOn Switching Loss | Eon | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 2.85 | 4.80 | mJ | |
| TurnOff Switching Loss | Eoff | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 1.20 | 1.60 | mJ | |
| Total Switching Loss | Ets | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 4.05 | 5.30 | mJ | |
| SWITCHING CHARACTERISTICS (TC = 175°C) | ||||||
| TurnOn Delay Time | td(on) | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 30 | ns | ||
| Rise Time | tr | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 57 | ns | ||
| TurnOff Delay Time | td(off) | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 176 | ns | ||
| Fall Time | tf | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 21 | ns | ||
| TurnOn Switching Loss | Eon | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 4.45 | mJ | ||
| TurnOff Switching Loss | Eoff | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 1.60 | mJ | ||
| Total Switching Loss | Ets | VCC = 400 V, IC = 75 A, RG = 3 Ω, VGE = 15 V, Inductive Load | 6.05 | mJ | ||
| ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) | ||||||
| Diode Forward Voltage | VFM | IF = 50 A, TC = 25°C | 2.1 | 2.6 | V | |
| Diode Forward Voltage | VFM | IF = 50 A, TC = 175°C | 1.7 | V | ||
| Reverse Recovery Energy | Erec | IF = 50 A, dIF/dt = 200 A/µs, TC = 175°C | 40 | µJ | ||
| Diode Reverse Recovery Time | trr | TC = 25°C | 43 | 85 | ns | |
| Diode Reverse Recovery Time | trr | TC = 175°C | 162 | ns | ||
| Diode Reverse Recovery Charge | Qrr | TC = 25°C | 83 | 170 | nC | |
| Diode Reverse Recovery Charge | Qrr | TC = 175°C | 805 | nC | ||
2411220231_onsemi-FGH75T65UPD_C605143.pdf
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