60V P Channel MOSFET PANJIT PJQ4465AP AU R2 000A1 designed for switching in automotive industrial sectors
Key Attributes
Model Number:
PJQ4465AP-AU_R2_000A1
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@10V;55mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
59pF
Number:
1 P-Channel
Output Capacitance(Coss):
87pF
Input Capacitance(Ciss):
1.256nF
Pd - Power Dissipation:
20W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
PJQ4465AP-AU_R2_000A1
Package:
DFN3333-8
Product Description
Product Overview
The PJQ4465AP-AU is a 60V P-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications. It features low on-resistance (RDS(ON)), high switching speed, and low gate charge, making it suitable for various automotive and industrial applications. This AEC-Q101 qualified component is compliant with EU RoHS 2.0 and manufactured using a green molding compound.
Product Attributes
- Brand: Panjit International Inc.
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, Green molding compound as per IEC 61249 Standard
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Maximum Ratings and Thermal Characteristics | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | +20 | V | |||
| Continuous Drain Current (Note 4) | ID | TC=25C | -15 | A | ||
| Continuous Drain Current (Note 4) | ID | TC=100C | -10 | A | ||
| Pulsed Drain Current (Note 1) | IDM | TC=25C | -60 | A | ||
| Power Dissipation | PD | TC=25C | 20 | W | ||
| Power Dissipation | PD | TC=100C | 8 | W | ||
| Continuous Drain Current (Note 4) | ID | TA=25C | -5 | A | ||
| Continuous Drain Current (Note 4) | ID | TA=70C | -4 | A | ||
| Power Dissipation | PD | TA=25C | 2 | W | ||
| Power Dissipation | PD | TA=70C | 1.3 | W | ||
| Single Pulse Avalanche Energy (Note 6) | EAS | 51 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | C | ||
| Typical Thermal Resistance (Note 4,5) Junction to Case | RJC | 6.3 | C/W | |||
| Typical Thermal Resistance (Note 4,5) Junction to Ambient | RJA | 62.5 | C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | -1 | -2.5 | V | |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10V, ID=-5A | 40 | 48 | m | |
| Drain-Source On-State Resistance | RDS(on) | VGS=-4.5V, ID=-3A | 55 | 65 | m | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=+20V, VDS=0V | +100 | nA | ||
| Dynamic Characteristics (Note 7) | ||||||
| Total Gate Charge | Qg | VDS=-30V, ID=-5A, VGS=-10V (Note 2,3) | 22 | nC | ||
| Gate-Source Charge | Qgs | 4.1 | ||||
| Gate-Drain Charge | Qg d | 5.2 | ||||
| Input Capacitance | Ciss | VDS=-30V, VGS=0V, f=1MHz | 1256 | pF | ||
| Output Capacitance | Coss | 87 | ||||
| Reverse Transfer Capacitance | Crss | 59 | ||||
| Switching Characteristics (Note 2,3) | ||||||
| Turn-On Delay Time | td(on) | VDD=-30V, ID=-1A, VGS=-10V, RG=6 | 13 | ns | ||
| Turn-On Rise Time | tr | 42 | ||||
| Turn-Off Delay Time | td(off) | 65 | ||||
| Turn-Off Fall Time | tf | 16 | ||||
| Drain-Source Diode Characteristics | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | -15 | A | |||
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -1 | V | ||
2412021749_PANJIT-PJQ4465AP-AU-R2-000A1_C6147631.pdf
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