Power semiconductor onsemi HGTP5N120BND IGBT 1200 volt 21 amp TO220AB for switching and power supply
Key Attributes
Model Number:
HGTP5N120BND
Product Custom Attributes
Td(off):
160ns
Pd - Power Dissipation:
167W
Td(on):
22ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
6V@45uA
Gate Charge(Qg):
53nC
Operating Temperature:
-55℃~+150℃@(Tj)
Reverse Recovery Time(trr):
65ns
Switching Energy(Eoff):
450uJ
Turn-On Energy (Eon):
600uJ
Mfr. Part #:
HGTP5N120BND
Package:
TO-220AB
Product Description
Product Overview
The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBTs designed for high voltage switching applications. These devices combine the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, making them ideal for AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors operating at moderate frequencies where low conduction losses are essential.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Origin: United States (implied by patent information and company registration)
- Certifications: Not explicitly mentioned, but subject to US patents.
Technical Specifications
| Part Number | Package | Voltage (V) | Current (A) | Switching SOA (A) | Power Dissipation (W) | Short Circuit Withstand Time (s) |
| HGTG5N120BND | TO-247 | 1200 | 21 (continuous at 25C) | 30 (at 1200V) | 167 (total at 25C) | 8 (at VGE=15V), 15 (at VGE=12V) |
| HGTP5N120BND | TO-220AB | 1200 | 21 (continuous at 25C) | 30 (at 1200V) | 167 (total at 25C) | 8 (at VGE=15V), 15 (at VGE=12V) |
2410122006_onsemi-HGTP5N120BND_C898683.pdf
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