750 Volt Silicon Carbide Cascode JFET onsemi UJ4C075060K4S with Standard Gate Drive Characteristics
Key Attributes
Model Number:
UJ4C075060K4S
Product Custom Attributes
Mfr. Part #:
UJ4C075060K4S
Package:
TO-247-4
Product Description
Product Overview
The UJ4C075060K4S is a 750 V, 58 m Silicon Carbide (SiC) Cascode JFET designed for high-performance power applications. This device utilizes a unique 'cascode' configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET with standard gate-drive characteristics. It offers an ultra-low gate charge, exceptional reverse recovery, and a low body diode forward voltage, making it an ideal drop-in replacement for existing Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO247-4 package, it is suitable for switching inductive loads and applications requiring standard gate drive.
Product Attributes
- Brand: onsemi
- Material: Silicon Carbide (SiC)
- Certifications: Pb-Free, Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 750 | V | |||
| Gate-Source Voltage (DC) | VGS | -20 | +20 | V | ||
| Continuous Drain Current | ID | TC = 25 C | 28 | A | ||
| Continuous Drain Current | ID | TC = 100 C | 20.6 | A | ||
| Pulsed Drain Current | IDM | TC = 25 C | 62 | A | ||
| Power Dissipation | Ptot | TC = 25 C | 155 | W | ||
| Maximum Junction Temperature | TJ,max | 175 | C | |||
| Operating and Storage Temperature | TJ, TSTG | -55 | 175 | C | ||
| Drain-Source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 25 C | 58 | 74 | m | |
| Drain-Source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 125 C | 106 | |||
| Drain-Source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 175 C | 147 | |||
| Gate Threshold Voltage | VG(th) | VDS = 5 V, ID = 10 mA | 4 | 4.8 | 6 | V |
| Reverse Recovery Charge | Qrr | VDS = 400 V, IS = 20 A, VGS = 0 V, RG_EXT = 20 , di/dt = 1060 A/s, TJ = 25 C | 52 | nC | ||
| Forward Voltage | VFSD | VGS = 0 V, IS = 10 A, TJ = 25 C | 1.31 | 1.75 | V | |
| Input Capacitance | Ciss | VDS = 100 V, VGS = 0 V, f = 100 kHz | 1422 | pF | ||
| Output Capacitance | Coss | VDS = 100 V, VGS = 0 V, f = 100 kHz | 68 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 100 V, VGS = 0 V, f = 100 kHz | 2.7 | pF | ||
| Total Gate Charge | QG | VDS = 400 V, ID = 20 A, VGS = 0 V to 15 V | 37.8 | nC | ||
| Turn-on Delay Time | td(on) | VDS = 400 V, ID = 20 A, Gate Driver = 0 V to +15 V, RG,EXT = 1 , TJ = 25 C | 12 | ns | ||
| Turn-off Delay Time | td(off) | VDS = 400 V, ID = 20 A, Gate Driver = 0 V to +15 V, RG,EXT = 1 , TJ = 25 C | 78 | ns | ||
| Turn-on Energy | EON | VDS = 400 V, ID = 20 A, Gate Driver = 0 V to +15 V, RG,EXT = 1 , TJ = 25 C | 126 | J | ||
| Turn-off Energy | EOFF | VDS = 400 V, ID = 20 A, Gate Driver = 0 V to +15 V, RG,EXT = 1 , TJ = 25 C | 37 | J |
2509091125_onsemi-UJ4C075060K4S_C45082801.pdf
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