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quality Automotive SPM module onsemi NFVA35065L42 with optimized inverter output stage and EMI minimization factory
quality Automotive SPM module onsemi NFVA35065L42 with optimized inverter output stage and EMI minimization factory
quality Automotive SPM module onsemi NFVA35065L42 with optimized inverter output stage and EMI minimization factory
quality Automotive SPM module onsemi NFVA35065L42 with optimized inverter output stage and EMI minimization factory

Automotive SPM module onsemi NFVA35065L42 with optimized inverter output stage and EMI minimization

Key Attributes
Model Number: NFVA35065L42
Product Custom Attributes
Mfr. Part #:
NFVA35065L42
Package:
DIP-27
Product Description

Product Overview

The NFVA35065L42 is an advanced Automotive SPM module designed for hybrid and electric vehicles. It provides a high-performance inverter output stage with optimized gate drive for IGBTs, minimizing EMI and losses. The module integrates multiple protection features including under-voltage lockouts, over-current shutdown, and thermal monitoring, with fault reporting capabilities. It requires a single supply voltage and translates logic-level gate inputs to high-voltage drive signals. Separate negative IGBT terminals facilitate various control algorithms.

Product Attributes

  • Brand: onsemi
  • Series: ASPM 27 Series
  • Package: 27 Pin DIP Package
  • Certifications: AEC & AQG324 Qualified, PPAP Capable, UI1557 Certified (File No. E209204), UL94V-0 Compliant, PbFree and RoHS Compliant
  • Material: Al2O3 DBC Substrate

Technical Specifications

ParameterConditionsMin.Typ.Max.Unit
INVERTER PART
Supply Voltage (VPN)Applied between PNU, NV, NW500V
Supply Voltage (Surge) (VPN(Surge))Applied between PNU, NV, NW575V
CollectorEmitter Voltage (VCES)650V
Each IGBT Collector Current (IC)TC = 100C, VDD 15 V, TJ 175C50A
Each IGBT Collector Current (Peak) (ICP)TC = 25C, TJ 175C, Under 1 ms Pulse Width100A
Collector Dissipation (PC)TC = 25C per One Chip115W
Operating Junction Temperature (TJ)IGBT and Diode40175C
Operating Junction Temperature (TJ)Driver IC40150C
Short Circuit Withstand Time (tSC)VDD = VBS 16.5 V, VPN 400 V, TJ = 150C Nonrepetitive3s
Isolation Voltage (VISO)60 Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat Sink Plate2500Vrms
Junction to Case Thermal Resistance (Rth(jc)Q)Inverter IGBT part (per 1/6 module)1.30C/W
Junction to Case Thermal Resistance (Rth(jc)F)Inverter FWD part (per 1/6 module)1.93C/W
Collector Emitter Saturation Voltage (VCE(SAT))VDD = VBS = 15 V, VIN = 5 V, IC = 50 A, TJ = 25C1.652.15V
Collector Emitter Saturation Voltage (VCE(SAT))VDD = VBS = 15 V, VIN = 5 V, IC = 50 A, TJ = 175C2.052.65V
Forward Voltage (VF)VIN = 0 V, IF = 50 A, TJ = 25C1.752.35V
Forward Voltage (VF)VIN = 0 V, IF = 50 A, TJ = 175C1.702.30V
High Side Turn-on Switching Time (HS tON)VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load0.751.20s
High Side Turn-on Clamping Time (HS tC(ON))VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load0.200.60s
High Side Turn-off Switching Time (HS tOFF)VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load1.301.85s
High Side Turn-off Clamping Time (HS tC(OFF))VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load0.150.45s
High Side Reverse Recovery Time (HS trr)VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load0.14s
Low Side Turn-on Switching Time (LS tON)VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load0.601.00s
Low Side Turn-on Clamping Time (LS tC(ON))VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load0.200.65s
Low Side Turn-off Switching Time (LS tOFF)VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load1.151.65s
Low Side Turn-off Clamping Time (LS tC(OFF))VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load0.250.60s
Low Side Reverse Recovery Time (LS trr)VPN = 300 V, VDD = 15 V, IC = 50 A, TJ = 25C, Inductive Load0.14s
CollectorEmitter Leakage Current (ICES)TJ = 25C, VCE = VCES3mA
CONTROL PART
Control Supply Voltage (VDD)Applied between VDD(H), VDD(L)COM20V
HighSide Control Bias Voltage (VBS)Applied between VB(U)VS(U), VB(V)VS(V), VB(W)VS(W)20V
Input Signal Voltage (VIN)Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL)COM0.3VDD+0.3V
Fault Output Supply Voltage (VFO)Applied between VFOCOM0.3VDD+0.3V
Fault Output Current (IFO)Sink Current at VFO pin2mA
Current Sensing Input Voltage (VSC)Applied between CSCCOM0.3VDD+0.3V
Quiescent VDD Supply Current (IQDDH)VDD(H) = 15 V, IN(UH,VH.WH) = 0 V0.40mA
Quiescent VDD Supply Current (IQDDL)VDD(L) = 15 V, IN(UL,VL,WL) = 0 V4.80mA
Operating VDD Supply Current (IPDDH)VDD(H) = 15 V, fPWM = 20 kHz, duty = 50%, applied to one PWM signal input for HighSide0.48mA

2411272102_onsemi-NFVA35065L42_C3615443.pdf

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