86--136 6733 2386
quality Thermal Monitoring and Under Voltage Lockout onsemi NFA50460R47 Motion SPM5 Module for Motor Control factory
quality Thermal Monitoring and Under Voltage Lockout onsemi NFA50460R47 Motion SPM5 Module for Motor Control factory

Thermal Monitoring and Under Voltage Lockout onsemi NFA50460R47 Motion SPM5 Module for Motor Control

Key Attributes
Model Number: NFA50460R47
Product Custom Attributes
Voltage - Isolation:
1500Vrms
Mfr. Part #:
NFA50460R47
Product Description

Motion SPM 5 Series NFA50460R4B, NFA50460R47

The NFA50460R4B/7 is an advanced Motion SPM5 module designed for high-performance AC induction, BLDC, and PMSM motor control in applications such as refrigerators, fans, and pumps. It integrates optimized gate drive for built-in IGBTs (FS4 RC IGBT technology) to minimize EMI and losses, along with multiple on-module protection features including under-voltage lockouts and thermal monitoring. The integrated driver IC simplifies design by requiring only a single supply voltage and translating logic-level gate inputs into high-voltage, high-current drive signals. Separate open emitter IGBT terminals for each phase enable diverse control algorithms.

Product Attributes

  • Brand: onsemi
  • Technology: FS4 RC IGBT
  • Certifications: RoHS Compliant
  • Moisture Sensitive Level (MSL): 3 for SMD PKG

Technical Specifications

Parameter Conditions Rating Unit
INVERTER PART
Supply Voltage (VPN) Applied between P NU, NV, NW 450 V
Supply Voltage (Surge) (VPN(Surge)) Applied between P NU, NV, NW 500 V
Collector Emitter Voltage (VCES) 600 V
Collector Current (IC) Each IGBT, TC = 25C, VDD = 15 V, TJ < 150C 4 A
Collector Current, Peak (ICP) Each IGBT, TC = 25C, VDD = 15 V, TJ < 150C, Under 1 ms Pulse Width 8 A
Collector Dissipation (PC) TC = 25C per One Chip 10.3 W
Operating Junction Temperature (TJ) -40~150 C
CONTROL PART
Control Supply Voltage (VDD) Applied between VDD and VSS 20 V
HighSide Control Bias Voltage (VBS) Applied between VB and VS 20 V
Input Signal Voltage (VIN) Applied between HIN, LIN and VSS -0.3~VDD + 0.3 V
BOOTSTRAP DIODE PART
Maximum Repetitive Reverse Voltage (VRRM) 600 V
Forward Current (IF) TC = 25C, TJ < 150C 0.5 A
Forward Current (Peak) (IFP) TC = 25C, TJ < 150C, Under 1 ms Pulse Width 1.5 A
TOTAL SYSTEM
Short Circuit Withstand Time (tSC) VDD = VBS 16.5 V, VPN 400 V, TJ = 150C, Nonrepetitive 3 s
Storage Temperature (TSTG) -40~125 C
Isolation Voltage (VISO) 60 Hz, Sinusoidal, AC 1 minute, Connect Pins to Heat Sink Plate 1500 Vrms
ELECTRICAL CHARACTERISTICS (TJ = 25C, VDD = VBS = 15 V unless otherwise noted)
INVERTER PART
CollectorEmitter Breakdown Voltage (BVCES) VIN = 0 V, ID = 1 mA 600 V
CollectorEmitter Leakage Current (ICES) VIN = 0 V, VCE = 600 V 1 mA
CollectorEmitter Saturation Voltage (VCE(SAT)) VDD = VBS = 15 V, VIN = 5 V, IC = 4 A, TJ = 25C 1.75~2.2 V
EmitterCollector Forward Voltage (VF) VIN = 0 V, IF = 4 A, TJ = 25C 1.87~2.3 V
Switching Times (tON) VPN = 300 V, VDD = VBS = 15 V, IC = 4 A, VIN = 0 V 5 V, Inductive Load, High and LowSide IGBT Switching 370 ns
Switching Times (tOFF) VPN = 300 V, VDD = VBS = 15 V, IC = 4 A, VIN = 0 V 5 V, Inductive Load, High and LowSide IGBT Switching 358 ns
CONTROL PART
Quiescent VDD Current (IQDD) VDD = 15 V, VIN = 0 V Applied between VDD and VSS 200 A
Quiescent VBS Current (IQBS) VBS = 15 V, VIN = 0 V Applied between VB(U) U, VB(V) V, VB(W) W 100 A
Operating VDD Supply Current (IPDD) VDD = 15 V, fPWM = 20 kHz, duty = 50%, Applied to One PWM Signal Input for LowSide 900 A
Operating VBS Supply Current (IPBS) VDD = VBS = 15 V, fPWM = 20 kHz, Duty = 50%, Applied to One PWM Signal Input for HighSide 800 A
LowSide Undervoltage Protection Detection Level (UVDDD) VDD Undervoltage Protection Detection Level 7.4~9.4 V
LowSide Undervoltage Protection Reset Level (UVDDR) VDD Undervoltage Protection Reset Level 8.0~9.8 V
HighSide Undervoltage Protection Detection Level (UVBSD) VBS Undervoltage Protection Detection Level 7.4~9.4 V
HighSide Undervoltage Protection Reset Level (UVBSR) VBS Undervoltage Protection Reset Level 8.0~9.8 V
IC Temperature Sensing Voltage Output (VTS) VDD = 15 V, Tdriver = 25C 600~980 mV
ON Threshold Voltage (VIH) Logic HIGH Level Applied between HIN, LIN and VSS 2.9 V
OFF Threshold Voltage (VIL) Logic LOW Level Applied between HIN, LIN and VSS 0.8 V
BOOTSTRAP DIODE PART
Forward Voltage (VFB) IF = 0.1 A, TC = 25C 2.5 V
Reverse Recovery Time (trrB) IF = 0.1 A, TC = 25C 80 ns

Applications

  • 3-Phase Inverter Driver for Small Power AC Motor Drives

2411272251_onsemi-NFA50460R47_C3615363.pdf

Related Products
quality Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications factory
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
quality Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks factory
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
quality Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability factory
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
quality 400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications factory
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.